Search for ferromagnetic ordering in Pd doped wide band gap semiconductors GaN and ZnO

P. Kessler*, K. Müller, T. Geruschke, H. Timmers, A. P. Byrne, R. Vianden

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    GaN and ZnO are possible candidates for dilute magnetic semiconductors with Curie temperatures above room temperature. Doping with transition metals like Co, Mn or Fe could be a simple way to create such systems. The perturbed angular correlation (PAC) probe 100Pd/100Rh is isoelectronic to cobalt and therefore a perfect tool to investigate the incorporation of transition metals into these compounds as well as the influence of other impurities on internal magnetic fields. The (0001) and (101̄0) surfaces of ZnO single crystals, freestanding GaN films, and GaN thin films (6 μm) on sapphire substrates were recoil-implanted with the 100Pd/100Rh probe. The probe was produced using the fusion evaporation reaction 92Zr(12C, 4n)100Pd at a beam energy of 69 MeV. Subsequently, the incorporation of the probe was studied by PAC spectroscopy during an isochronal annealing program. First results without and with an applied external magnetic field are indicative of a strongly disturbed lattice vicinity of Pd impurities in both hosts. No signs of spontaneous ferromagnetic ordering were observed.

    Original languageEnglish
    Pages (from-to)155-158
    Number of pages4
    JournalHyperfine Interactions
    Issue number1
    Publication statusPublished - 2010


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