Abstract
The Maker fringe method and second-harmonic light microscopy were applied to investigate the second-order optical nonlinearity induced in thermally poled silica thin films. It was found that the nonlinearity in Ge-doped film was more than three times that in pure silica film. Results from the second-harmonic microscopy revealed that, in the Ge-doped silica thin films with varying Ge-doping concentration along the thin film depth, the nonlinearity exhibited a multilayer distribution with peaks located at positions with highest contrast in Ge doping profile.
Original language | English |
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Pages (from-to) | 639-641 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 44 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2008 |