Segregation and precipitation of Er in Ge

S. O. Kucheyev*, J. E. Bradby, S. Ruffell, C. P. Li, T. E. Felter, A. V. Hamza

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)


    Although Er-doped Ge nanomaterials are attractive for photonic applications, very little is known about the basic properties of Er in Ge. Here, the authors study the annealing behavior of Ge implanted with keV Er ions to doses resulting in 1 at. % of Er. Large redistribution of Er, with segregation at the amorphous/crystalline interface, starts at 500 °C, while lower temperatures are required for material recrystallization. However, even at 400 °C, Er forms precipitates. The concentration of Er trapped in the bulk after recrystallization decreases with increasing temperature but is independent of the initial bulk Er concentration for the range of ion doses studied here.

    Original languageEnglish
    Article number221901
    JournalApplied Physics Letters
    Issue number22
    Publication statusPublished - 2007


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