TY - JOUR
T1 - Selective area epitaxy of III-V nanostructure arrays and networks
T2 - Growth, applications, and future directions
AU - Yuan, Xiaoming
AU - Pan, Dong
AU - Zhou, Yijin
AU - Zhang, Xutao
AU - Peng, Kun
AU - Zhao, Bijun
AU - Deng, Mingtang
AU - He, Jun
AU - Tan, Hark Hoe
AU - Jagadish, Chennupati
N1 - Publisher Copyright:
© 2021 Author(s).
PY - 2021/6/1
Y1 - 2021/6/1
N2 - Selective area epitaxy (SAE) can be used to grow highly uniform III-V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III-V nanowire arrays, monolithic integration of III-V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III-V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed.
AB - Selective area epitaxy (SAE) can be used to grow highly uniform III-V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III-V nanowire arrays, monolithic integration of III-V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III-V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed.
UR - http://www.scopus.com/inward/record.url?scp=85103756740&partnerID=8YFLogxK
U2 - 10.1063/5.0044706
DO - 10.1063/5.0044706
M3 - Review article
SN - 1931-9401
VL - 8
JO - Applied Physics Reviews
JF - Applied Physics Reviews
IS - 2
M1 - 021302
ER -