Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

S. Mokkapati; P. Lever; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1109/COMMAD.2004.1577543

Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

S. Mokkapati^*, P. Lever, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	273-275
Number of pages	3
DOIs	https://doi.org/10.1109/COMMAD.2004.1577543
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

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10.1109/COMMAD.2004.1577543

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Mokkapati, S., Lever, P., Tan, H. H., Jagadish, C., McBean, K. E., & Phillips, M. R. (2005). Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 273-275). Article 1577543 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577543

@inproceedings{015e0686baae48bea26b6fd9161ce691,

title = "Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration",

abstract = "We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.",

keywords = "Integrated optoelectronic devices, Quantum dot, Selective area epitaxy",

author = "S. Mokkapati and P. Lever and Tan, {H. H.} and C. Jagadish and McBean, {K. E.} and Phillips, {M. R.}",

year = "2005",

doi = "10.1109/COMMAD.2004.1577543",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "273--275",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Mokkapati, S, Lever, P, Tan, HH , Jagadish, C, McBean, KE & Phillips, MR 2005, Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577543, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 273-275, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577543

Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. / Mokkapati, S.; Lever, P.; Tan, H. H. et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 273-275 1577543 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

AU - Mokkapati, S.

AU - Lever, P.

AU - Tan, H. H.

AU - Jagadish, C.

AU - McBean, K. E.

AU - Phillips, M. R.

PY - 2005

Y1 - 2005

N2 - We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

AB - We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

KW - Integrated optoelectronic devices

KW - Quantum dot

KW - Selective area epitaxy

UR - http://www.scopus.com/inward/record.url?scp=46149087539&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2004.1577543

DO - 10.1109/COMMAD.2004.1577543

M3 - Conference contribution

SN - 0780388208

SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 273

EP - 275

BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

ER -

Mokkapati S, Lever P, Tan HH , Jagadish C, McBean KE, Phillips MR. Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 273-275. 1577543. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577543

Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration

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