Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers

Wei Wen Wong; Stephen Church; Chennupati Jagadish; Naiyin Wang; Patrick Parkinson; Hark Hoe Tan

doi:10.1109/IPC53466.2022.9975650

Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers

Wei Wen Wong, Stephen Church, Chennupati Jagadish, Naiyin Wang, Patrick Parkinson, Hark Hoe Tan

ARC Centre of Excellence for Transformative Meta-Optical Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this work, we demonstrate the incorporation of InAsP multi-quantum well (MQW) structure in InP micro-ring lasers grown with a selective area epitaxy technique. Through optimization of the metal organic chemical vapor deposition (MOCVD) growth conditions, we observe a transition from a 3D island growth mode to a 2D layer-by-layer growth mode during the InAsP-on-InP growth, resulting in MQW with high crystal quality and uniformity. Furthermore, we also demonstrate tuning of the emission wavelength from 1.1 to 1.35 mm by varying the growth conditions. Finally, aided by design and modelling of the ring cavity with numerical methods, we demonstrate room-temperature lasing in the InP/InAsP micro-ring lasers.

Original language	English
Title of host publication	2022 IEEE Photonics Conference, IPC 2022 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665434874
DOIs	https://doi.org/10.1109/IPC53466.2022.9975650
Publication status	Published - 2022
Event	2022 IEEE Photonics Conference, IPC 2022 - Vancouver, Canada Duration: 13 Nov 2022 → 17 Nov 2022

Publication series

Name	2022 IEEE Photonics Conference, IPC 2022 - Proceedings

Conference

Conference	2022 IEEE Photonics Conference, IPC 2022
Country/Territory	Canada
City	Vancouver
Period	13/11/22 → 17/11/22

Access to Document

10.1109/IPC53466.2022.9975650

Cite this

Wong, W. W., Church, S., Jagadish, C., Wang, N., Parkinson, P., & Tan, H. H. (2022). Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers. In 2022 IEEE Photonics Conference, IPC 2022 - Proceedings (2022 IEEE Photonics Conference, IPC 2022 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPC53466.2022.9975650

@inproceedings{dd2d86d7ac0f40d291d3f49d0a619d53,

title = "Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers",

abstract = "In this work, we demonstrate the incorporation of InAsP multi-quantum well (MQW) structure in InP micro-ring lasers grown with a selective area epitaxy technique. Through optimization of the metal organic chemical vapor deposition (MOCVD) growth conditions, we observe a transition from a 3D island growth mode to a 2D layer-by-layer growth mode during the InAsP-on-InP growth, resulting in MQW with high crystal quality and uniformity. Furthermore, we also demonstrate tuning of the emission wavelength from 1.1 to 1.35 mm by varying the growth conditions. Finally, aided by design and modelling of the ring cavity with numerical methods, we demonstrate room-temperature lasing in the InP/InAsP micro-ring lasers.",

keywords = "III-V quantum well lasers, micro-ring laser, selective area epitaxy",

author = "Wong, {Wei Wen} and Stephen Church and Chennupati Jagadish and Naiyin Wang and Patrick Parkinson and Tan, {Hark Hoe}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Photonics Conference, IPC 2022 ; Conference date: 13-11-2022 Through 17-11-2022",

year = "2022",

doi = "10.1109/IPC53466.2022.9975650",

language = "English",

series = "2022 IEEE Photonics Conference, IPC 2022 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE Photonics Conference, IPC 2022 - Proceedings",

address = "United States",

}

Wong, WW, Church, S, Jagadish, C, Wang, N, Parkinson, P & Tan, HH 2022, Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers. in 2022 IEEE Photonics Conference, IPC 2022 - Proceedings. 2022 IEEE Photonics Conference, IPC 2022 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Photonics Conference, IPC 2022, Vancouver, Canada, 13/11/22. https://doi.org/10.1109/IPC53466.2022.9975650

Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers. / Wong, Wei Wen; Church, Stephen; Jagadish, Chennupati et al.
2022 IEEE Photonics Conference, IPC 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Photonics Conference, IPC 2022 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers

AU - Wong, Wei Wen

AU - Church, Stephen

AU - Jagadish, Chennupati

AU - Wang, Naiyin

AU - Parkinson, Patrick

AU - Tan, Hark Hoe

PY - 2022

Y1 - 2022

N2 - In this work, we demonstrate the incorporation of InAsP multi-quantum well (MQW) structure in InP micro-ring lasers grown with a selective area epitaxy technique. Through optimization of the metal organic chemical vapor deposition (MOCVD) growth conditions, we observe a transition from a 3D island growth mode to a 2D layer-by-layer growth mode during the InAsP-on-InP growth, resulting in MQW with high crystal quality and uniformity. Furthermore, we also demonstrate tuning of the emission wavelength from 1.1 to 1.35 mm by varying the growth conditions. Finally, aided by design and modelling of the ring cavity with numerical methods, we demonstrate room-temperature lasing in the InP/InAsP micro-ring lasers.

AB - In this work, we demonstrate the incorporation of InAsP multi-quantum well (MQW) structure in InP micro-ring lasers grown with a selective area epitaxy technique. Through optimization of the metal organic chemical vapor deposition (MOCVD) growth conditions, we observe a transition from a 3D island growth mode to a 2D layer-by-layer growth mode during the InAsP-on-InP growth, resulting in MQW with high crystal quality and uniformity. Furthermore, we also demonstrate tuning of the emission wavelength from 1.1 to 1.35 mm by varying the growth conditions. Finally, aided by design and modelling of the ring cavity with numerical methods, we demonstrate room-temperature lasing in the InP/InAsP micro-ring lasers.

KW - III-V quantum well lasers

KW - micro-ring laser

KW - selective area epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85145607271&partnerID=8YFLogxK

U2 - 10.1109/IPC53466.2022.9975650

DO - 10.1109/IPC53466.2022.9975650

M3 - Conference contribution

T3 - 2022 IEEE Photonics Conference, IPC 2022 - Proceedings

BT - 2022 IEEE Photonics Conference, IPC 2022 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Photonics Conference, IPC 2022

Y2 - 13 November 2022 through 17 November 2022

ER -

Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this