Abstract
InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.
Original language | English |
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Pages (from-to) | 1356-1358 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 72 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1998 |