Self-forming InAs/GaP quantum dots by direct island growth

R. Leon, C. Lobo, T. P. Chin, J. M. Woodall, S. Fafard, S. Ruvimov, Z. Liliental-Weber, M. A. Stevens Kalceff

    Research output: Contribution to journalArticlepeer-review

    37 Citations (Scopus)

    Abstract

    InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.

    Original languageEnglish
    Pages (from-to)1356-1358
    Number of pages3
    JournalApplied Physics Letters
    Volume72
    Issue number11
    DOIs
    Publication statusPublished - 1998

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