Self-forming InAs/GaP quantum dots by direct island growth

R. Leon; C. Lobo; T. P. Chin; J. M. Woodall; S. Fafard; S. Ruvimov; Z. Liliental-Weber; M. A. Stevens Kalceff

doi:10.1063/1.121070

Self-forming InAs/GaP quantum dots by direct island growth

R. Leon, C. Lobo, T. P. Chin, J. M. Woodall, S. Fafard, S. Ruvimov, Z. Liliental-Weber, M. A. Stevens Kalceff

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37 Citations (Scopus)

Abstract

InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.

Original language	English
Pages (from-to)	1356-1358
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	11
DOIs	https://doi.org/10.1063/1.121070
Publication status	Published - 1998

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title = "Self-forming InAs/GaP quantum dots by direct island growth",

abstract = "InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.",

author = "R. Leon and C. Lobo and Chin, \{T. P.\} and Woodall, \{J. M.\} and S. Fafard and S. Ruvimov and Z. Liliental-Weber and \{Stevens Kalceff\}, \{M. A.\}",

year = "1998",

doi = "10.1063/1.121070",

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volume = "72",

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T1 - Self-forming InAs/GaP quantum dots by direct island growth

AU - Leon, R.

AU - Lobo, C.

AU - Chin, T. P.

AU - Woodall, J. M.

AU - Fafard, S.

AU - Ruvimov, S.

AU - Liliental-Weber, Z.

AU - Stevens Kalceff, M. A.

PY - 1998

Y1 - 1998

N2 - InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.

AB - InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.

UR - https://www.scopus.com/pages/publications/0000338881

U2 - 10.1063/1.121070

DO - 10.1063/1.121070

M3 - Article

SN - 0003-6951

VL - 72

SP - 1356

EP - 1358

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Self-forming InAs/GaP quantum dots by direct island growth

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