Abstract
Ge substrates of (100) orientation were irradiated with 1.0 MeV Ge ions at temperatures in the range from -180°C to 500°C. Pronounced swelling of the irradiated material up to 4000 Å, associated with the formation of a porous surface layer, was evident only for temperatures between -50°C and 200°C. The extent of swelling was found to be insensitive to temperature in this range and exhibited an approximately linear dose dependence for doses up to 1 × 1017 Ge cm-2. For temperatures outside this range, only sputtering effects were observed. The structure of the porous surface layer was examined by transmission electron microscopy. For samples irradiated at 22°C, it was shown to have a density ∼30% that of bulk Ge. These layers were further shown to be stable during subsequent annealing to 500°C.
Original language | English |
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Pages (from-to) | 193-196 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 175-177 |
DOIs | |
Publication status | Published - Apr 2001 |
Event | 12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil Duration: 3 Sept 2000 → 8 Sept 2000 |