Self-limited underdense microplasmas in bulk silicon induced by ultrashort laser pulses

Alexandros Mouskeftaras; Andrei V. Rode; Raphaël Clady; Marc Sentis; Olivier Utéza; David Grojo

doi:10.1063/1.4901528

Self-limited underdense microplasmas in bulk silicon induced by ultrashort laser pulses

Alexandros Mouskeftaras, Andrei V. Rode, Raphaël Clady, Marc Sentis, Olivier Utéza, David Grojo

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 10¹²W/cm². The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ≅10¹⁹ cm-3, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the ∼100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses.

Original language	English
Article number	191103
Journal	Applied Physics Letters
Volume	105
Issue number	19
DOIs	https://doi.org/10.1063/1.4901528
Publication status	Published - 10 Nov 2014

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abstract = "Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 1012W/cm2. The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ≅1019 cm-3, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the ∼100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses.",

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AU - Rode, Andrei V.

AU - Clady, Raphaël

AU - Sentis, Marc

AU - Utéza, Olivier

AU - Grojo, David

PY - 2014/11/10

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N2 - Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 1012W/cm2. The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ≅1019 cm-3, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the ∼100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses.

AB - Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 1012W/cm2. The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ≅1019 cm-3, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the ∼100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses.

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Self-limited underdense microplasmas in bulk silicon induced by ultrashort laser pulses

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