Semiconductor Nanowires for Optoelectronic Applications

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    Abstract

    III-V compound semiconductor nanowires including GaAs, InAs and GaAs/AlGaAs core-shell heterostructures have been grown by using metalorganic chemical vapor deposition. Precise ZB/WZ phase control has been obtained in GaAs and InAs nanowires. Long room temperature minority carrier lifetime was observed in GaAs/AlGaAs core-shell nanowires. Prototype solar cell and laser devices were also demonstrated.

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