Abstract
III-V compound semiconductor nanowires including GaAs, InAs and GaAs/AlGaAs core-shell heterostructures have been grown by using metalorganic chemical vapor deposition. Precise ZB/WZ phase control has been obtained in GaAs and InAs nanowires. Long room temperature minority carrier lifetime was observed in GaAs/AlGaAs core-shell nanowires. Prototype solar cell and laser devices were also demonstrated.
Original language | English |
---|---|
Pages (from-to) | 1pp |
Journal | Proceedings 13th International Conference on Fiber Optics and Photonics |
DOIs | |
Publication status | Published - 2016 |
Event | International Conference on Fibre Optics and Photonics - Kanpur, India Duration: 1 Jan 2016 → … https://www.osapublishing.org/conference.cfm?meetingid=139&yr=2016 |