Abstract
III-V compound semiconductor nanowires including GaAs, InAs and GaAs/AlGaAs core-shell heterostructures have been grown by using metalorganic chemical vapor deposition. Precise ZB/WZ phase control has been obtained in GaAs and InAs nanowires. Long room temperature minority carrier lifetime was observed in GaAs/AlGaAs core-shell nanowires. Prototype solar cell and laser devices were also demonstrated.
| Original language | English |
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| Pages (from-to) | 1pp |
| Journal | Proceedings 13th International Conference on Fiber Optics and Photonics |
| DOIs | |
| Publication status | Published - 2016 |
| Event | International Conference on Fibre Optics and Photonics - Kanpur, India Duration: 1 Jan 2016 → … https://www.osapublishing.org/conference.cfm?meetingid=139&yr=2016 |