Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

P. Pellegrino; P. Lévêque; J. Wong-Leung; C. Jagadish; B. G. Svensson

doi:10.1063/1.1374960

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

P. Pellegrino^*, P. Lévêque, J. Wong-Leung, C. Jagadish, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon-interstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV ¹¹B ions, the peak of the interstitial profile is displaced by ∼0.5 μm towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms.

Original language	English
Pages (from-to)	3442-3444
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	22
DOIs	https://doi.org/10.1063/1.1374960
Publication status	Published - 28 May 2001

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abstract = "An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon-interstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV 11B ions, the peak of the interstitial profile is displaced by ∼0.5 μm towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms.",

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AU - Pellegrino, P.

AU - Lévêque, P.

AU - Wong-Leung, J.

AU - Jagadish, C.

AU - Svensson, B. G.

PY - 2001/5/28

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AB - An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon-interstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV 11B ions, the peak of the interstitial profile is displaced by ∼0.5 μm towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms.

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Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

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