Shape control and emission wavelength extension of InP-based InAsSb nanostructures

Wen Lei; H. H. Tan; C. Jagadish

Shape control and emission wavelength extension of InP-based InAsSb nanostructures

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer layer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2 μm, which is very useful for their application as mid-infrared emitters.

Original language	English
Title of host publication	Excitons and Plasmon Resonances in Nanostructures II
Pages	178-183
Number of pages	6
Publication status	Published - 2010
Event	2009 MRS Fall Meeting - Boston, MA, United States Duration: 30 Nov 2009 → 4 Dec 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1208
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	30/11/09 → 4/12/09

Cite this

@inproceedings{2141899a8d4c4158ac24d8e387e8637f,

title = "Shape control and emission wavelength extension of InP-based InAsSb nanostructures",

abstract = "This paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer layer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2 μm, which is very useful for their application as mid-infrared emitters.",

author = "Wen Lei and Tan, {H. H.} and C. Jagadish",

year = "2010",

language = "English",

isbn = "9781617387630",

series = "Materials Research Society Symposium Proceedings",

pages = "178--183",

booktitle = "Excitons and Plasmon Resonances in Nanostructures II",

note = "2009 MRS Fall Meeting ; Conference date: 30-11-2009 Through 04-12-2009",

}

TY - GEN

T1 - Shape control and emission wavelength extension of InP-based InAsSb nanostructures

AU - Lei, Wen

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

N2 - This paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer layer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2 μm, which is very useful for their application as mid-infrared emitters.

AB - This paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer layer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2 μm, which is very useful for their application as mid-infrared emitters.

UR - http://www.scopus.com/inward/record.url?scp=77957788632&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781617387630

T3 - Materials Research Society Symposium Proceedings

SP - 178

EP - 183

BT - Excitons and Plasmon Resonances in Nanostructures II

T2 - 2009 MRS Fall Meeting

Y2 - 30 November 2009 through 4 December 2009

ER -

Shape control and emission wavelength extension of InP-based InAsSb nanostructures

Abstract

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Conference

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