Shell formation in InGaAs nanowires driven by lattice latching and polarity effect

Y. Guo; J. Zou; T. Burgess; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472355

Shell formation in InGaAs nanowires driven by lattice latching and polarity effect

Y. Guo, J. Zou^*, T. Burgess, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <112>_A directions, while three In-rich zones are formed along <112>_B directions in the truncated-triangular shells. The polarity-driven lattice latching effect is accounted for this compositional inhomogeneity found in the shell.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	51-52
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472355
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472355

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Guo, Y., Zou, J., Burgess, T., Gao, Q., Tan, H. H., & Jagadish, C. (2012). Shell formation in InGaAs nanowires driven by lattice latching and polarity effect. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 51-52). Article 6472355 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472355

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title = "Shell formation in InGaAs nanowires driven by lattice latching and polarity effect",

abstract = "A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <112>A directions, while three In-rich zones are formed along <112>B directions in the truncated-triangular shells. The polarity-driven lattice latching effect is accounted for this compositional inhomogeneity found in the shell.",

author = "Y. Guo and J. Zou and T. Burgess and Q. Gao and Tan, \{H. H.\} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472355",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "51--52",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Guo, Y, Zou, J, Burgess, T, Gao, Q, Tan, HH & Jagadish, C 2012, Shell formation in InGaAs nanowires driven by lattice latching and polarity effect. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472355, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 51-52, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472355

Shell formation in InGaAs nanowires driven by lattice latching and polarity effect. / Guo, Y.; Zou, J.; Burgess, T. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 51-52 6472355 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Shell formation in InGaAs nanowires driven by lattice latching and polarity effect

AU - Guo, Y.

AU - Zou, J.

AU - Burgess, T.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <112>A directions, while three In-rich zones are formed along <112>B directions in the truncated-triangular shells. The polarity-driven lattice latching effect is accounted for this compositional inhomogeneity found in the shell.

AB - A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <112>A directions, while three In-rich zones are formed along <112>B directions in the truncated-triangular shells. The polarity-driven lattice latching effect is accounted for this compositional inhomogeneity found in the shell.

UR - https://www.scopus.com/pages/publications/84875580760

U2 - 10.1109/COMMAD.2012.6472355

DO - 10.1109/COMMAD.2012.6472355

M3 - Conference Paper

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 51

EP - 52

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Guo Y, Zou J, Burgess T, Gao Q, Tan HH , Jagadish C. Shell formation in InGaAs nanowires driven by lattice latching and polarity effect. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 51-52. 6472355. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472355

Shell formation in InGaAs nanowires driven by lattice latching and polarity effect

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