Abstract
Growth conditions have been optimised for Si and C δ-doped AlGaAs at 630°C. Very high free carrier densities up to 6 × 1018 and 3 × 1019 cm-3, respectively, for Si and C δ-doped AlGaAs, were obtained. The key parameters to precisely control δ-doping concentrations were discussed. Growth of high quality Si and C δ-doped nipi structures, Si δ-modulation doped In0.2Ga0.8As/GaAs quantum wells, and high performance Zn-free C δ-doped In0.2Ga0.8As/GaAs GRINSCH lasers were also reported.
Original language | English |
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Pages (from-to) | 54-57 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 195 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 15 Dec 1998 |