Si and C δ-doping for device applications

G. Li*, M. B. Johnston, A. Babinski, S. Yuan, M. Gal, S. J. Chua, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    Growth conditions have been optimised for Si and C δ-doped AlGaAs at 630°C. Very high free carrier densities up to 6 × 1018 and 3 × 1019 cm-3, respectively, for Si and C δ-doped AlGaAs, were obtained. The key parameters to precisely control δ-doping concentrations were discussed. Growth of high quality Si and C δ-doped nipi structures, Si δ-modulation doped In0.2Ga0.8As/GaAs quantum wells, and high performance Zn-free C δ-doped In0.2Ga0.8As/GaAs GRINSCH lasers were also reported.

    Original languageEnglish
    Pages (from-to)54-57
    Number of pages4
    JournalJournal of Crystal Growth
    Volume195
    Issue number1-4
    DOIs
    Publication statusPublished - 15 Dec 1998

    Fingerprint

    Dive into the research topics of 'Si and C δ-doping for device applications'. Together they form a unique fingerprint.

    Cite this