Si and C δ-doping for device applications

G. Li; M. B. Johnston; A. Babinski; S. Yuan; M. Gal; S. J. Chua; C. Jagadish

doi:10.1016/S0022-0248(98)00640-X

Si and C δ-doping for device applications

G. Li^*, M. B. Johnston, A. Babinski, S. Yuan, M. Gal, S. J. Chua, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Growth conditions have been optimised for Si and C δ-doped AlGaAs at 630°C. Very high free carrier densities up to 6 × 10¹⁸ and 3 × 10¹⁹ cm^-3, respectively, for Si and C δ-doped AlGaAs, were obtained. The key parameters to precisely control δ-doping concentrations were discussed. Growth of high quality Si and C δ-doped nipi structures, Si δ-modulation doped In_0.2Ga_0.8As/GaAs quantum wells, and high performance Zn-free C δ-doped In_0.2Ga_0.8As/GaAs GRINSCH lasers were also reported.

Original language	English
Pages (from-to)	54-57
Number of pages	4
Journal	Journal of Crystal Growth
Volume	195
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(98)00640-X
Publication status	Published - 15 Dec 1998

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10.1016/S0022-0248(98)00640-X

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@article{42c70814afee4e7796740dd543250044,

title = "Si and C δ-doping for device applications",

abstract = "Growth conditions have been optimised for Si and C δ-doped AlGaAs at 630°C. Very high free carrier densities up to 6 × 1018 and 3 × 1019 cm-3, respectively, for Si and C δ-doped AlGaAs, were obtained. The key parameters to precisely control δ-doping concentrations were discussed. Growth of high quality Si and C δ-doped nipi structures, Si δ-modulation doped In0.2Ga0.8As/GaAs quantum wells, and high performance Zn-free C δ-doped In0.2Ga0.8As/GaAs GRINSCH lasers were also reported.",

keywords = "Compound semiconductor, Epitaxial growth, MOVPE, δ-Doped, δ-Doping",

author = "G. Li and Johnston, \{M. B.\} and A. Babinski and S. Yuan and M. Gal and Chua, \{S. J.\} and C. Jagadish",

year = "1998",

month = dec,

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doi = "10.1016/S0022-0248(98)00640-X",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Si and C δ-doping for device applications

AU - Li, G.

AU - Johnston, M. B.

AU - Babinski, A.

AU - Yuan, S.

AU - Gal, M.

AU - Chua, S. J.

AU - Jagadish, C.

PY - 1998/12/15

Y1 - 1998/12/15

N2 - Growth conditions have been optimised for Si and C δ-doped AlGaAs at 630°C. Very high free carrier densities up to 6 × 1018 and 3 × 1019 cm-3, respectively, for Si and C δ-doped AlGaAs, were obtained. The key parameters to precisely control δ-doping concentrations were discussed. Growth of high quality Si and C δ-doped nipi structures, Si δ-modulation doped In0.2Ga0.8As/GaAs quantum wells, and high performance Zn-free C δ-doped In0.2Ga0.8As/GaAs GRINSCH lasers were also reported.

AB - Growth conditions have been optimised for Si and C δ-doped AlGaAs at 630°C. Very high free carrier densities up to 6 × 1018 and 3 × 1019 cm-3, respectively, for Si and C δ-doped AlGaAs, were obtained. The key parameters to precisely control δ-doping concentrations were discussed. Growth of high quality Si and C δ-doped nipi structures, Si δ-modulation doped In0.2Ga0.8As/GaAs quantum wells, and high performance Zn-free C δ-doped In0.2Ga0.8As/GaAs GRINSCH lasers were also reported.

KW - Compound semiconductor

KW - Epitaxial growth

KW - MOVPE

KW - δ-Doped

KW - δ-Doping

UR - https://www.scopus.com/pages/publications/0032477156

U2 - 10.1016/S0022-0248(98)00640-X

DO - 10.1016/S0022-0248(98)00640-X

M3 - Article

SN - 0022-0248

VL - 195

SP - 54

EP - 57

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Si and C δ-doping for device applications

Abstract

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