@inproceedings{1c8a72079dd54c3db13590027574fb3d,
title = "Sidewall evolution in VLS grown GaAs nanowires",
abstract = "The sidewalk of Au-catalysed GaAs nanowires are studied systematically by using transmission electron microscopy. The cross-sectional shape of the VLS grown nanowires was found to consist of 3 curved surfaces along {112}A. The curved surfaces evolve into three {112}A and three {112}B facets towards the base of the nanowire due to the radial growth around the nanowire. These sidewalls transform to {110} facets at high temperature annealing and the transformation rate is determined by the cross-sectional shape and size of the nanowires.",
keywords = "Epitaxial growth, III-V semiconductor materials, Nanowires",
author = "Nian Jiang and Jennifer Wong-Leung and Qiang Gao and Tan, {Hark Hoe} and Chennupati Jagadish",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",
year = "2014",
month = feb,
day = "10",
doi = "10.1109/COMMAD.2014.7038659",
language = "English",
series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "87--89",
editor = "Mariusz Martyniuk and Lorenzo Faraone",
booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",
address = "United States",
}