Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1950-1956
Journal	Journal of the Electrochemical Society
Volume	147
Publication status	Published - 2000

Cite this

@article{0ec9679e8fd442919e939b8b898496cf,

title = "Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells",

author = "Prakash Deenapanray and Hoe Tan and M Cohen and K Gaff and K Gaff and Mladen Petravic and Chennupati Jagadish",

year = "2000",

language = "English",

volume = "147",

pages = "1950--1956",

journal = "Journal of the Electrochemical Society",

publisher = "Electrochemical Society Inc.",

}

TY - JOUR

T1 - Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells

AU - Deenapanray, Prakash

AU - Tan, Hoe

AU - Cohen, M

AU - Gaff, K

AU - Petravic, Mladen

AU - Jagadish, Chennupati

PY - 2000

Y1 - 2000

M3 - Article

VL - 147

SP - 1950

EP - 1956

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -