Silicon epitaxial solar cell with 663-mV open-circuit voltage

A. W. Blakers; J. H. Werner; E. Bauser; H. J. Queisser

doi:10.1063/1.106866

Silicon epitaxial solar cell with 663-mV open-circuit voltage

A. W. Blakers^*, J. H. Werner, E. Bauser, H. J. Queisser

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Silicon films of 20 μm thickness have been grown epitaxially on silicon substrates by liquid-phase epitaxy. Solar cells fabricated on such layers display open-circuit voltages as high as 663 mV (AM1.5, 25°C), a value which exceeds previous data by a large margin. High open-circuit voltages are a prerequisite for thin-film solar cells with high efficiencies. Our result has applications to both space cells and to low-cost terrestrial cells.

Original language	English
Pages (from-to)	2752-2754
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	22
DOIs	https://doi.org/10.1063/1.106866
Publication status	Published - 1992
Externally published	Yes

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@article{06775ea0969c46e688ac6ff25894a899,

title = "Silicon epitaxial solar cell with 663-mV open-circuit voltage",

abstract = "Silicon films of 20 μm thickness have been grown epitaxially on silicon substrates by liquid-phase epitaxy. Solar cells fabricated on such layers display open-circuit voltages as high as 663 mV (AM1.5, 25°C), a value which exceeds previous data by a large margin. High open-circuit voltages are a prerequisite for thin-film solar cells with high efficiencies. Our result has applications to both space cells and to low-cost terrestrial cells.",

author = "Blakers, {A. W.} and Werner, {J. H.} and E. Bauser and Queisser, {H. J.}",

year = "1992",

doi = "10.1063/1.106866",

language = "English",

volume = "60",

pages = "2752--2754",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Silicon epitaxial solar cell with 663-mV open-circuit voltage

AU - Blakers, A. W.

AU - Werner, J. H.

AU - Bauser, E.

AU - Queisser, H. J.

PY - 1992

Y1 - 1992

N2 - Silicon films of 20 μm thickness have been grown epitaxially on silicon substrates by liquid-phase epitaxy. Solar cells fabricated on such layers display open-circuit voltages as high as 663 mV (AM1.5, 25°C), a value which exceeds previous data by a large margin. High open-circuit voltages are a prerequisite for thin-film solar cells with high efficiencies. Our result has applications to both space cells and to low-cost terrestrial cells.

AB - Silicon films of 20 μm thickness have been grown epitaxially on silicon substrates by liquid-phase epitaxy. Solar cells fabricated on such layers display open-circuit voltages as high as 663 mV (AM1.5, 25°C), a value which exceeds previous data by a large margin. High open-circuit voltages are a prerequisite for thin-film solar cells with high efficiencies. Our result has applications to both space cells and to low-cost terrestrial cells.

UR - http://www.scopus.com/inward/record.url?scp=0012604959&partnerID=8YFLogxK

U2 - 10.1063/1.106866

DO - 10.1063/1.106866

M3 - Article

AN - SCOPUS:0012604959

SN - 0003-6951

VL - 60

SP - 2752

EP - 2754

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Silicon epitaxial solar cell with 663-mV open-circuit voltage

Abstract

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