Silicon Luminescence Spectra Modelling and the Impact of Dopants

Anyao Liu*, Hieu T. Nguyen, Daniel Macdonald

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review


    This paper presents findings on applying physical models in the literature to describe silicon luminescence spectra at 80 - 300 K. Incorporation of exciton recombination models are shown to disagree with the measured luminescence spectra, whereas a free electron-hole recombination model is shown to match well with the luminescence spectra. However, the lack of consideration for excitons is not justified, as Bludau et al. [J. Appl. Phys., vol. 45, p. 1846, 1974] reported that excitons are present even at room temperature. The second part of the paper demonstrates the impact of shallow dopants on the silicon luminescence spectra at 79K. The ratio of the dopant-related peak to the band-to-band peak intensities correlates with the dopant concentration, indicating that luminescence spectroscopy has the potential for quantifying dopant concentrations in silicon in this temperature range.

    Original languageEnglish
    Pages (from-to)852-856
    Number of pages5
    JournalEnergy Procedia
    Publication statusPublished - 1 Aug 2016
    Event6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, France
    Duration: 7 Mar 20169 Mar 2016


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