Silicon quantum dot nanostructures for tandem photovoltaic cells

Gavin Conibeer; Martin Green; Eun-Chel Cho; Dirk Koenig; Young-Hyun Cho; Thipwan Fangsuwannarak; Giuseppe Scardera; Edwin Pink; Yidan Huang; Tom Puzzer; Shujuan Huang; Dengyuan Song; Chris Flynn; Sangwook Park; Xiaojing Hao; Daniel Mansfield

doi:10.1016/j.tsf.2007.12.096

Silicon quantum dot nanostructures for tandem photovoltaic cells

Gavin Conibeer, Martin Green, Eun-Chel Cho, Dirk Koenig, Young-Hyun Cho, Thipwan Fangsuwannarak, Giuseppe Scardera, Edwin Pink, Yidan Huang, Tom Puzzer, Shujuan Huang, Dengyuan Song, Chris Flynn, Sangwook Park, Xiaojing Hao, Daniel Mansfield

Research output: Contribution to journal › Article › peer-review

373 Citations (Scopus)

Abstract

Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sri QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element. (c) 2008 Elsevier B.V All rights reserved.

Original language	English
Pages (from-to)	6748-6756
Number of pages	9
Journal	Thin Solid Films
Volume	516
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2007.12.096
Publication status	Published - 30 Aug 2008
Externally published	Yes

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10.1016/j.tsf.2007.12.096

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title = "Silicon quantum dot nanostructures for tandem photovoltaic cells",

abstract = "Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sri QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element. (c) 2008 Elsevier B.V All rights reserved.",

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AU - Conibeer, Gavin

AU - Green, Martin

AU - Cho, Eun-Chel

AU - Koenig, Dirk

AU - Cho, Young-Hyun

AU - Fangsuwannarak, Thipwan

AU - Scardera, Giuseppe

AU - Pink, Edwin

AU - Huang, Yidan

AU - Puzzer, Tom

AU - Huang, Shujuan

AU - Song, Dengyuan

AU - Flynn, Chris

AU - Park, Sangwook

AU - Hao, Xiaojing

AU - Mansfield, Daniel

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AB - Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sri QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element. (c) 2008 Elsevier B.V All rights reserved.

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KW - Quantum dots

KW - Thin film

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JO - Thin Solid Films

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Silicon quantum dot nanostructures for tandem photovoltaic cells

Abstract

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