Silicon surface-bound redox-active conjugated wires derived from mono- and dinuclear iron(II) and ruthenium(II) oligo(phenyleneethynylene) complexes

Nicolas Gauthier*, Gilles Argouarch, Frédéric Paul, Mark G. Humphrey, Loic Toupet, Soraya Ababou-Girard, Hussein Sabbah, Philippe Hapiot, Bruno Fabre

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    56 Citations (Scopus)

    Abstract

    A study has demonstrated the successful covalent assembly of electron-rich mononuclear Fe(II) (21-23) and dinuclear Fe(II) Ru(II) acetylides on monocrystalline silicon surfaces following a novel approach. The experimentation shows that electron-rich mononuclear Fe(II) (2n) or dinuclear Fe(II)/Ru(II) (3) acetylide complexes can be grafted onto hydrogenated silicon surfaces under very mild conditions and following a simple one-step photochemical procedure. These redox-active organometallic monolayers exhibit facile electron transfer between the bound metal centers and the silicon surface through the interfacial Si-C bond. The electron-rich Fe(II) centers in compounds 2n or 3 are oxidized at significantly lower potentials. The data obtained for the Si-3 also unambiguously establish the possibility of generating bound mixed-valence states at the silicon interface.

    Original languageEnglish
    Pages (from-to)1952-1956
    Number of pages5
    JournalAdvanced Materials
    Volume20
    Issue number10
    DOIs
    Publication statusPublished - 19 May 2008

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