Abstract
A study has demonstrated the successful covalent assembly of electron-rich mononuclear Fe(II) (21-23) and dinuclear Fe(II) Ru(II) acetylides on monocrystalline silicon surfaces following a novel approach. The experimentation shows that electron-rich mononuclear Fe(II) (2n) or dinuclear Fe(II)/Ru(II) (3) acetylide complexes can be grafted onto hydrogenated silicon surfaces under very mild conditions and following a simple one-step photochemical procedure. These redox-active organometallic monolayers exhibit facile electron transfer between the bound metal centers and the silicon surface through the interfacial Si-C bond. The electron-rich Fe(II) centers in compounds 2n or 3 are oxidized at significantly lower potentials. The data obtained for the Si-3 also unambiguously establish the possibility of generating bound mixed-valence states at the silicon interface.
Original language | English |
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Pages (from-to) | 1952-1956 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 20 |
Issue number | 10 |
DOIs | |
Publication status | Published - 19 May 2008 |