Silicon surface-bound redox-active conjugated wires derived from mono- and dinuclear iron(II) and ruthenium(II) oligo(phenyleneethynylene) complexes

Nicolas Gauthier; Gilles Argouarch; Frédéric Paul; Mark G. Humphrey; Loic Toupet; Soraya Ababou-Girard; Hussein Sabbah; Philippe Hapiot; Bruno Fabre

doi:10.1002/adma.200800324

Silicon surface-bound redox-active conjugated wires derived from mono- and dinuclear iron(II) and ruthenium(II) oligo(phenyleneethynylene) complexes

Nicolas Gauthier^*, Gilles Argouarch, Frédéric Paul, Mark G. Humphrey, Loic Toupet, Soraya Ababou-Girard, Hussein Sabbah, Philippe Hapiot, Bruno Fabre

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

A study has demonstrated the successful covalent assembly of electron-rich mononuclear Fe(II) (2₁-2₃) and dinuclear Fe(II) Ru(II) acetylides on monocrystalline silicon surfaces following a novel approach. The experimentation shows that electron-rich mononuclear Fe(II) (2_n) or dinuclear Fe(II)/Ru(II) (3) acetylide complexes can be grafted onto hydrogenated silicon surfaces under very mild conditions and following a simple one-step photochemical procedure. These redox-active organometallic monolayers exhibit facile electron transfer between the bound metal centers and the silicon surface through the interfacial Si-C bond. The electron-rich Fe(II) centers in compounds 2_n or 3 are oxidized at significantly lower potentials. The data obtained for the Si-3 also unambiguously establish the possibility of generating bound mixed-valence states at the silicon interface.

Original language	English
Pages (from-to)	1952-1956
Number of pages	5
Journal	Advanced Materials
Volume	20
Issue number	10
DOIs	https://doi.org/10.1002/adma.200800324
Publication status	Published - 19 May 2008

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title = "Silicon surface-bound redox-active conjugated wires derived from mono- and dinuclear iron(II) and ruthenium(II) oligo(phenyleneethynylene) complexes",

abstract = "A study has demonstrated the successful covalent assembly of electron-rich mononuclear Fe(II) (21-23) and dinuclear Fe(II) Ru(II) acetylides on monocrystalline silicon surfaces following a novel approach. The experimentation shows that electron-rich mononuclear Fe(II) (2n) or dinuclear Fe(II)/Ru(II) (3) acetylide complexes can be grafted onto hydrogenated silicon surfaces under very mild conditions and following a simple one-step photochemical procedure. These redox-active organometallic monolayers exhibit facile electron transfer between the bound metal centers and the silicon surface through the interfacial Si-C bond. The electron-rich Fe(II) centers in compounds 2n or 3 are oxidized at significantly lower potentials. The data obtained for the Si-3 also unambiguously establish the possibility of generating bound mixed-valence states at the silicon interface.",

author = "Nicolas Gauthier and Gilles Argouarch and Fr{\'e}d{\'e}ric Paul and Humphrey, \{Mark G.\} and Loic Toupet and Soraya Ababou-Girard and Hussein Sabbah and Philippe Hapiot and Bruno Fabre",

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T1 - Silicon surface-bound redox-active conjugated wires derived from mono- and dinuclear iron(II) and ruthenium(II) oligo(phenyleneethynylene) complexes

AU - Gauthier, Nicolas

AU - Argouarch, Gilles

AU - Paul, Frédéric

AU - Humphrey, Mark G.

AU - Toupet, Loic

AU - Ababou-Girard, Soraya

AU - Sabbah, Hussein

AU - Hapiot, Philippe

AU - Fabre, Bruno

PY - 2008/5/19

Y1 - 2008/5/19

N2 - A study has demonstrated the successful covalent assembly of electron-rich mononuclear Fe(II) (21-23) and dinuclear Fe(II) Ru(II) acetylides on monocrystalline silicon surfaces following a novel approach. The experimentation shows that electron-rich mononuclear Fe(II) (2n) or dinuclear Fe(II)/Ru(II) (3) acetylide complexes can be grafted onto hydrogenated silicon surfaces under very mild conditions and following a simple one-step photochemical procedure. These redox-active organometallic monolayers exhibit facile electron transfer between the bound metal centers and the silicon surface through the interfacial Si-C bond. The electron-rich Fe(II) centers in compounds 2n or 3 are oxidized at significantly lower potentials. The data obtained for the Si-3 also unambiguously establish the possibility of generating bound mixed-valence states at the silicon interface.

AB - A study has demonstrated the successful covalent assembly of electron-rich mononuclear Fe(II) (21-23) and dinuclear Fe(II) Ru(II) acetylides on monocrystalline silicon surfaces following a novel approach. The experimentation shows that electron-rich mononuclear Fe(II) (2n) or dinuclear Fe(II)/Ru(II) (3) acetylide complexes can be grafted onto hydrogenated silicon surfaces under very mild conditions and following a simple one-step photochemical procedure. These redox-active organometallic monolayers exhibit facile electron transfer between the bound metal centers and the silicon surface through the interfacial Si-C bond. The electron-rich Fe(II) centers in compounds 2n or 3 are oxidized at significantly lower potentials. The data obtained for the Si-3 also unambiguously establish the possibility of generating bound mixed-valence states at the silicon interface.

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U2 - 10.1002/adma.200800324

DO - 10.1002/adma.200800324

M3 - Article

SN - 0935-9648

VL - 20

SP - 1952

EP - 1956

JO - Advanced Materials

JF - Advanced Materials

IS - 10

ER -

Silicon surface-bound redox-active conjugated wires derived from mono- and dinuclear iron(II) and ruthenium(II) oligo(phenyleneethynylene) complexes

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