Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants

Dong Suh; Wensheng Liang

doi:10.1002/pssr.201409263

Silicon surface passivation by atomic-layer-deposited Al₂O₃ facilitated in situ by the combination of H₂O and O₃ as reactants

Dong Suh^*, Wensheng Liang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigate the effect of O₃ and H₂O oxidant pre-pulse prior to Al₂O₃ atomic layer deposition for Si surface passivation. Interfacial oxide SiO_x formed by the O₃ pre-pulse is more beneficial than that by H₂O to a high level of surface passivation. The passivation of thinner H₂O-Al₂O₃ films is more improved by this O₃ pre-pulse. O₃ pre-pulse for 10 nm H₂O-Al₂O₃ reduces saturation current density in boron emitter to 18 fA cm^-2 by a factor of 1.7. Capacitance-voltage measurements reveal this interfacial oxide plays a role of decreasing interface trap density without detrimental effect to negative charge density of Al₂O₃.

Original language	English
Pages (from-to)	771-775
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	9
DOIs	https://doi.org/10.1002/pssr.201409263
Publication status	Published - 2014

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title = "Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants",

abstract = "We investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The passivation of thinner H2O-Al2O3 films is more improved by this O3 pre-pulse. O3 pre-pulse for 10 nm H2O-Al2O3 reduces saturation current density in boron emitter to 18 fA cm-2 by a factor of 1.7. Capacitance-voltage measurements reveal this interfacial oxide plays a role of decreasing interface trap density without detrimental effect to negative charge density of Al2O3.",

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N2 - We investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The passivation of thinner H2O-Al2O3 films is more improved by this O3 pre-pulse. O3 pre-pulse for 10 nm H2O-Al2O3 reduces saturation current density in boron emitter to 18 fA cm-2 by a factor of 1.7. Capacitance-voltage measurements reveal this interfacial oxide plays a role of decreasing interface trap density without detrimental effect to negative charge density of Al2O3.

AB - We investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The passivation of thinner H2O-Al2O3 films is more improved by this O3 pre-pulse. O3 pre-pulse for 10 nm H2O-Al2O3 reduces saturation current density in boron emitter to 18 fA cm-2 by a factor of 1.7. Capacitance-voltage measurements reveal this interfacial oxide plays a role of decreasing interface trap density without detrimental effect to negative charge density of Al2O3.

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Silicon surface passivation by atomic-layer-deposited Al₂O₃ facilitated in situ by the combination of H₂O and O₃ as reactants

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