Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact

James Bullock; Andres Cuevas; Christian Samundsett; Di Yan; Josephine McKeon; Yimao Wan

doi:10.1016/j.solmat.2015.02.030

Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact

James Bullock^*, Andres Cuevas, Christian Samundsett, Di Yan, Josephine McKeon, Yimao Wan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

This paper presents the experimental demonstration of silicon solar cells that incorporate an enhanced MIS passivated contact scheme on a phosphorus diffused surface. By depositing intrinsic a-Si:H on an ultrathin SiO_x layer and alloying with an overlying aluminium layer, the interface passivation has been vastly improved over that of conventional MIS contacts, whilst maintaining a low contact resistance. This paper focuses on the optimisation of the Al/a-Si:H alloying process and the influence of the tunnelling SiO_x layer thickness. A conversion efficiency of 21.0% has been achieved for n-type cells fabricated with a front boron diffusion and a full area rear MIS passivated phosphorus diffusion. The cells exhibit a moderate V_oc=666 mV and FF=0.805, whereas J_sc 39.3 mA/cm² is relatively low due to a non-optimal antireflection coating and back surface reflector, and hence will be subject to further improvement.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	138
DOIs	https://doi.org/10.1016/j.solmat.2015.02.030
Publication status	Published - Jul 2015

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title = "Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact",

abstract = "This paper presents the experimental demonstration of silicon solar cells that incorporate an enhanced MIS passivated contact scheme on a phosphorus diffused surface. By depositing intrinsic a-Si:H on an ultrathin SiOx layer and alloying with an overlying aluminium layer, the interface passivation has been vastly improved over that of conventional MIS contacts, whilst maintaining a low contact resistance. This paper focuses on the optimisation of the Al/a-Si:H alloying process and the influence of the tunnelling SiOx layer thickness. A conversion efficiency of 21.0\% has been achieved for n-type cells fabricated with a front boron diffusion and a full area rear MIS passivated phosphorus diffusion. The cells exhibit a moderate Voc=666 mV and FF=0.805, whereas Jsc 39.3 mA/cm2 is relatively low due to a non-optimal antireflection coating and back surface reflector, and hence will be subject to further improvement.",

keywords = "MIS contacts, Passivated contacts, Silicon solar cells",

author = "James Bullock and Andres Cuevas and Christian Samundsett and Di Yan and Josephine McKeon and Yimao Wan",

year = "2015",

month = jul,

doi = "10.1016/j.solmat.2015.02.030",

language = "English",

volume = "138",

pages = "22--25",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact

AU - Bullock, James

AU - Cuevas, Andres

AU - Samundsett, Christian

AU - Yan, Di

AU - McKeon, Josephine

AU - Wan, Yimao

PY - 2015/7

Y1 - 2015/7

N2 - This paper presents the experimental demonstration of silicon solar cells that incorporate an enhanced MIS passivated contact scheme on a phosphorus diffused surface. By depositing intrinsic a-Si:H on an ultrathin SiOx layer and alloying with an overlying aluminium layer, the interface passivation has been vastly improved over that of conventional MIS contacts, whilst maintaining a low contact resistance. This paper focuses on the optimisation of the Al/a-Si:H alloying process and the influence of the tunnelling SiOx layer thickness. A conversion efficiency of 21.0% has been achieved for n-type cells fabricated with a front boron diffusion and a full area rear MIS passivated phosphorus diffusion. The cells exhibit a moderate Voc=666 mV and FF=0.805, whereas Jsc 39.3 mA/cm2 is relatively low due to a non-optimal antireflection coating and back surface reflector, and hence will be subject to further improvement.

AB - This paper presents the experimental demonstration of silicon solar cells that incorporate an enhanced MIS passivated contact scheme on a phosphorus diffused surface. By depositing intrinsic a-Si:H on an ultrathin SiOx layer and alloying with an overlying aluminium layer, the interface passivation has been vastly improved over that of conventional MIS contacts, whilst maintaining a low contact resistance. This paper focuses on the optimisation of the Al/a-Si:H alloying process and the influence of the tunnelling SiOx layer thickness. A conversion efficiency of 21.0% has been achieved for n-type cells fabricated with a front boron diffusion and a full area rear MIS passivated phosphorus diffusion. The cells exhibit a moderate Voc=666 mV and FF=0.805, whereas Jsc 39.3 mA/cm2 is relatively low due to a non-optimal antireflection coating and back surface reflector, and hence will be subject to further improvement.

KW - MIS contacts

KW - Passivated contacts

KW - Silicon solar cells

UR - https://www.scopus.com/pages/publications/84924973405

U2 - 10.1016/j.solmat.2015.02.030

DO - 10.1016/j.solmat.2015.02.030

M3 - Article

SN - 0927-0248

VL - 138

SP - 22

EP - 25

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact

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