Simulation and suppression of the gas phase pre-reaction in metal-organic chemical vapor deposition of ZnO

Guang Yao Zhu; Shu Lin Gu; Shun Ming Zhu; Kun Tang; Jian Dong Ye; Rong Zhang; Yi Shi; You Dou Zheng

doi:10.1088/0256-307X/28/11/116803

Simulation and suppression of the gas phase pre-reaction in metal-organic chemical vapor deposition of ZnO

Guang Yao Zhu, Shu Lin Gu^*, Shun Ming Zhu, Kun Tang, Jian Dong Ye, Rong Zhang, Yi Shi, You Dou Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented, indicating the temperature of the reaction species. The gas phase pre-reaction can be modulated by several factors or conditions. Simulations verify the relationships between temperature and pyrolysis of precursors, and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution. The experimental results agree with the simulations.

Original language	English
Article number	116803
Journal	Chinese Physics Letters
Volume	28
Issue number	11
DOIs	https://doi.org/10.1088/0256-307X/28/11/116803
Publication status	Published - Nov 2011
Externally published	Yes

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10.1088/0256-307X/28/11/116803

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title = "Simulation and suppression of the gas phase pre-reaction in metal-organic chemical vapor deposition of ZnO",

abstract = "The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented, indicating the temperature of the reaction species. The gas phase pre-reaction can be modulated by several factors or conditions. Simulations verify the relationships between temperature and pyrolysis of precursors, and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution. The experimental results agree with the simulations.",

author = "Zhu, {Guang Yao} and Gu, {Shu Lin} and Zhu, {Shun Ming} and Kun Tang and Ye, {Jian Dong} and Rong Zhang and Yi Shi and Zheng, {You Dou}",

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AU - Zhu, Guang Yao

AU - Gu, Shu Lin

AU - Zhu, Shun Ming

AU - Tang, Kun

AU - Ye, Jian Dong

AU - Zhang, Rong

AU - Shi, Yi

AU - Zheng, You Dou

PY - 2011/11

Y1 - 2011/11

N2 - The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented, indicating the temperature of the reaction species. The gas phase pre-reaction can be modulated by several factors or conditions. Simulations verify the relationships between temperature and pyrolysis of precursors, and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution. The experimental results agree with the simulations.

AB - The reaction mechanism and simulations of the metal-organic chemical vapor deposition reactor for ZnO film growth are presented, indicating the temperature of the reaction species. The gas phase pre-reaction can be modulated by several factors or conditions. Simulations verify the relationships between temperature and pyrolysis of precursors, and further reveal that the substrate temperature and flow rate of cooling water have great impacts on the temperature distribution. The experimental results agree with the simulations.

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U2 - 10.1088/0256-307X/28/11/116803

DO - 10.1088/0256-307X/28/11/116803

M3 - Article

SN - 0256-307X

VL - 28

JO - Chinese Physics Letters

JF - Chinese Physics Letters

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M1 - 116803

ER -

Simulation and suppression of the gas phase pre-reaction in metal-organic chemical vapor deposition of ZnO

Abstract

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