Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence

J. A. Giesecke; D. Walter; F. Kopp; P. Rosenits; M. C. Schubert; W. Warta

doi:10.1109/PVSC.2010.5617178

Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence

J. A. Giesecke, D. Walter, F. Kopp, P. Rosenits, M. C. Schubert, W. Warta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

A simultaneous determination of injection dependent minority carrier lifetime and net dopant concentration in crystalline silicon wafers from quasi-steady-state photoluminescence (QSSPL) is theoretically derived and experimentally implemented. The time shift between maxima of a time modulated irradiation intensity and the respective photoluminescence intensity is linked to effective minority carrier lifetime. In addition, the ratio of peak curvatures of irradiation intensity and photoluminescence intensity reveals the net dopant concentration of the respective material. Thus, we found a luminescence based technique to determine injection dependent minority carrier lifetime in silicon wafers, which requires a priori information neither about carrier mobilities nor about net dopant concentration.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	847-851
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5617178
Publication status	Published - 2010
Externally published	Yes
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

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10.1109/PVSC.2010.5617178

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Giesecke, J. A., Walter, D., Kopp, F., Rosenits, P., Schubert, M. C., & Warta, W. (2010). Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 847-851). Article 5617178 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5617178

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title = "Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence",

abstract = "A simultaneous determination of injection dependent minority carrier lifetime and net dopant concentration in crystalline silicon wafers from quasi-steady-state photoluminescence (QSSPL) is theoretically derived and experimentally implemented. The time shift between maxima of a time modulated irradiation intensity and the respective photoluminescence intensity is linked to effective minority carrier lifetime. In addition, the ratio of peak curvatures of irradiation intensity and photoluminescence intensity reveals the net dopant concentration of the respective material. Thus, we found a luminescence based technique to determine injection dependent minority carrier lifetime in silicon wafers, which requires a priori information neither about carrier mobilities nor about net dopant concentration.",

author = "Giesecke, {J. A.} and D. Walter and F. Kopp and P. Rosenits and Schubert, {M. C.} and W. Warta",

year = "2010",

doi = "10.1109/PVSC.2010.5617178",

language = "English",

isbn = "9781424458912",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "847--851",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

Giesecke, JA, Walter, D, Kopp, F, Rosenits, P, Schubert, MC & Warta, W 2010, Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5617178, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 847-851, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5617178

Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence. / Giesecke, J. A.; Walter, D.; Kopp, F. et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 847-851 5617178 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence

AU - Giesecke, J. A.

AU - Walter, D.

AU - Kopp, F.

AU - Rosenits, P.

AU - Schubert, M. C.

AU - Warta, W.

PY - 2010

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N2 - A simultaneous determination of injection dependent minority carrier lifetime and net dopant concentration in crystalline silicon wafers from quasi-steady-state photoluminescence (QSSPL) is theoretically derived and experimentally implemented. The time shift between maxima of a time modulated irradiation intensity and the respective photoluminescence intensity is linked to effective minority carrier lifetime. In addition, the ratio of peak curvatures of irradiation intensity and photoluminescence intensity reveals the net dopant concentration of the respective material. Thus, we found a luminescence based technique to determine injection dependent minority carrier lifetime in silicon wafers, which requires a priori information neither about carrier mobilities nor about net dopant concentration.

AB - A simultaneous determination of injection dependent minority carrier lifetime and net dopant concentration in crystalline silicon wafers from quasi-steady-state photoluminescence (QSSPL) is theoretically derived and experimentally implemented. The time shift between maxima of a time modulated irradiation intensity and the respective photoluminescence intensity is linked to effective minority carrier lifetime. In addition, the ratio of peak curvatures of irradiation intensity and photoluminescence intensity reveals the net dopant concentration of the respective material. Thus, we found a luminescence based technique to determine injection dependent minority carrier lifetime in silicon wafers, which requires a priori information neither about carrier mobilities nor about net dopant concentration.

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U2 - 10.1109/PVSC.2010.5617178

DO - 10.1109/PVSC.2010.5617178

M3 - Conference contribution

SN - 9781424458912

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 847

EP - 851

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

Y2 - 20 June 2010 through 25 June 2010

ER -

Giesecke JA, Walter D, Kopp F, Rosenits P, Schubert MC, Warta W. Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 847-851. 5617178. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2010.5617178

Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence

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