Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

Qian Gao; Vladimir G. Dubrovskii; Philippe Caroff; Jennifer Wong-Leung; Li Li; Yanan Guo; Lan Fu; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/acs.nanolett.6b01461

Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

Qian Gao^*, Vladimir G. Dubrovskii, Philippe Caroff, Jennifer Wong-Leung, Li Li, Yanan Guo, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP 〈111〉A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.

Original language	English
Pages (from-to)	4361-4367
Number of pages	7
Journal	Nano Letters
Volume	16
Issue number	7
DOIs	https://doi.org/10.1021/acs.nanolett.6b01461
Publication status	Published - 13 Jul 2016

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title = "Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays",

abstract = "Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP 〈111〉A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.",

keywords = "III-V nanowires, metal-catalyst, metalorganic vapor phase epitaxy, nucleation, selective-area epitaxy, vapor-liquid-solid growth",

author = "Qian Gao and Dubrovskii, {Vladimir G.} and Philippe Caroff and Jennifer Wong-Leung and Li Li and Yanan Guo and Lan Fu and Tan, {Hark Hoe} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

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doi = "10.1021/acs.nanolett.6b01461",

language = "English",

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T1 - Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

AU - Gao, Qian

AU - Dubrovskii, Vladimir G.

AU - Caroff, Philippe

AU - Wong-Leung, Jennifer

AU - Li, Li

AU - Guo, Yanan

AU - Fu, Lan

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2016/7/13

Y1 - 2016/7/13

N2 - Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP 〈111〉A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.

AB - Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP 〈111〉A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.

KW - III-V nanowires

KW - metal-catalyst

KW - metalorganic vapor phase epitaxy

KW - nucleation

KW - selective-area epitaxy

KW - vapor-liquid-solid growth

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U2 - 10.1021/acs.nanolett.6b01461

DO - 10.1021/acs.nanolett.6b01461

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JO - Nano Letters

JF - Nano Letters

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Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

Abstract

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