Single-layer semiconducting nanosheets: High-yield preparation and device fabrication

Zhiyuan Zeng; Zongyou Yin; Xiao Huang; Hai Li; Qiyuan He; Gang Lu; Freddy Boey; Hua Zhang

doi:10.1002/anie.201106004

Single-layer semiconducting nanosheets: High-yield preparation and device fabrication

Zhiyuan Zeng, Zongyou Yin, Xiao Huang, Hai Li, Qiyuan He, Gang Lu, Freddy Boey, Hua Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1700 Citations (Scopus)

Abstract

Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS ₂, WS₂, TiS₂, TaS₂, ZrS₂, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS₂ was achieved in 92 % yield. A single-layer MoS₂-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.

Original language	English
Pages (from-to)	11093-11097
Number of pages	5
Journal	Angewandte Chemie - International Edition
Volume	50
Issue number	47
DOIs	https://doi.org/10.1002/anie.201106004
Publication status	Published - 18 Nov 2011
Externally published	Yes

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10.1002/anie.201106004

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title = "Single-layer semiconducting nanosheets: High-yield preparation and device fabrication",

abstract = "Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.",

keywords = "electrochemistry, nanomaterials, nanosheets, semiconductors, sensors",

author = "Zhiyuan Zeng and Zongyou Yin and Xiao Huang and Hai Li and Qiyuan He and Gang Lu and Freddy Boey and Hua Zhang",

year = "2011",

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T1 - Single-layer semiconducting nanosheets

T2 - High-yield preparation and device fabrication

AU - Zeng, Zhiyuan

AU - Yin, Zongyou

AU - Huang, Xiao

AU - Li, Hai

AU - He, Qiyuan

AU - Lu, Gang

AU - Boey, Freddy

AU - Zhang, Hua

PY - 2011/11/18

Y1 - 2011/11/18

N2 - Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.

AB - Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.

KW - electrochemistry

KW - nanomaterials

KW - nanosheets

KW - semiconductors

KW - sensors

UR - http://www.scopus.com/inward/record.url?scp=81255169387&partnerID=8YFLogxK

U2 - 10.1002/anie.201106004

DO - 10.1002/anie.201106004

M3 - Article

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EP - 11097

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 47

ER -

Single-layer semiconducting nanosheets: High-yield preparation and device fabrication

Abstract

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