Single phase nanocrystalline GaMnN thin films with high Mn content

Ga1-x Mnx N thin films with a Mn content as high as x=0.18 have been grown using ion-assisted deposition and a combination of Rutherford backscattering spectroscopy and nuclear reaction analysis was used to determine their composition. The structure of the films was determined from x-ray diffraction, transmission electron microscopy, and extended x-ray absorption fine structure (EXAFS). The films are comprised of nanocrystals of random stacked GaMnN and there is no evidence of Mn-rich secondary phases or clusters. EXAFS measurements at the Mn and Ga edge are almost identical to those at the Ga edge from Mn-free nanocrystalline GaN films, showing that the Mn occupies the Ga lattice sites, and simulated radial distribution functions of possible Mn-rich impurity phases bear no resemblance to the experimental data. The results indicate that these are the most heavily Mn-doped single phase GaN films studied to date.