TY - GEN
T1 - Single step implant isolation of p+-InP using mev ion beams
AU - Ridgway, M. C.
AU - Jagadish, C.
AU - Elliman, R. G.
AU - Hauser, N.
N1 - Publisher Copyright:
© 1992 IEEE.
PY - 1992
Y1 - 1992
N2 - Implant isolation of epitaxial p+-InP layers using a single, highenergy 0 implant, with a projected range several times that of the conductive layer, has been investigated. Results are compared with two alternative implant isolation schemes, with ion ranges confined to the epitaxial layer, - a multiple, low-energy O implant and a single, high-energy In implant. Single-step implant isolation offers considerable process simplification compared to conventional, multiple-implant sequences. Comparable sheet resistance values were achieved for the three different implant sequences, though the two schemes with ion ranges confined to the conductive layer yielded greater thermal stability. This difference is attributed to implantation-induced conduction in the semi-insulating substrate following the high-energy O implant.
AB - Implant isolation of epitaxial p+-InP layers using a single, highenergy 0 implant, with a projected range several times that of the conductive layer, has been investigated. Results are compared with two alternative implant isolation schemes, with ion ranges confined to the epitaxial layer, - a multiple, low-energy O implant and a single, high-energy In implant. Single-step implant isolation offers considerable process simplification compared to conventional, multiple-implant sequences. Comparable sheet resistance values were achieved for the three different implant sequences, though the two schemes with ion ranges confined to the conductive layer yielded greater thermal stability. This difference is attributed to implantation-induced conduction in the semi-insulating substrate following the high-energy O implant.
UR - http://www.scopus.com/inward/record.url?scp=84888231730&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.1992.235582
DO - 10.1109/ICIPRM.1992.235582
M3 - Conference contribution
AN - SCOPUS:84888231730
T3 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
SP - 294
EP - 297
BT - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Y2 - 21 April 1992 through 24 April 1992
ER -