Single-step implant isolation of p+-InP with 5-MeV O ions

M. C. Ridgway; C. Jagadish; R. G. Elliman; N. Hauser

doi:10.1063/1.106792

Single-step implant isolation of p⁺-InP with 5-MeV O ions

M. C. Ridgway^*, C. Jagadish, R. G. Elliman, N. Hauser

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The applicability of a single, 5-MeV O implant for electrical isolation of epitaxial p⁺-InP layers on semi-insulating InP substrates has been investigated. For such an implant, the ion range is several times that of the epitaxial layer and, consequently, end-of-range disorder is buried deep within the substrate. Though sheet resistances of ∼5×10⁶ Ω/sq were achieved, irradiation-induced conduction in the substrate limits the maximum sheet resistance attainable. The single, high-energy implant scheme has been compared with a multiple, low-energy implant sequence. For a given level of disorder in the epitaxial layer, the latter yields higher sheet-resistance values though the former offers significant process simplification.

Original language	English
Pages (from-to)	3010-3012
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	24
DOIs	https://doi.org/10.1063/1.106792
Publication status	Published - 1992

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title = "Single-step implant isolation of p+-InP with 5-MeV O ions",

abstract = "The applicability of a single, 5-MeV O implant for electrical isolation of epitaxial p+-InP layers on semi-insulating InP substrates has been investigated. For such an implant, the ion range is several times that of the epitaxial layer and, consequently, end-of-range disorder is buried deep within the substrate. Though sheet resistances of ∼5×106 Ω/sq were achieved, irradiation-induced conduction in the substrate limits the maximum sheet resistance attainable. The single, high-energy implant scheme has been compared with a multiple, low-energy implant sequence. For a given level of disorder in the epitaxial layer, the latter yields higher sheet-resistance values though the former offers significant process simplification.",

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AU - Ridgway, M. C.

AU - Jagadish, C.

AU - Elliman, R. G.

AU - Hauser, N.

PY - 1992

Y1 - 1992

N2 - The applicability of a single, 5-MeV O implant for electrical isolation of epitaxial p+-InP layers on semi-insulating InP substrates has been investigated. For such an implant, the ion range is several times that of the epitaxial layer and, consequently, end-of-range disorder is buried deep within the substrate. Though sheet resistances of ∼5×106 Ω/sq were achieved, irradiation-induced conduction in the substrate limits the maximum sheet resistance attainable. The single, high-energy implant scheme has been compared with a multiple, low-energy implant sequence. For a given level of disorder in the epitaxial layer, the latter yields higher sheet-resistance values though the former offers significant process simplification.

AB - The applicability of a single, 5-MeV O implant for electrical isolation of epitaxial p+-InP layers on semi-insulating InP substrates has been investigated. For such an implant, the ion range is several times that of the epitaxial layer and, consequently, end-of-range disorder is buried deep within the substrate. Though sheet resistances of ∼5×106 Ω/sq were achieved, irradiation-induced conduction in the substrate limits the maximum sheet resistance attainable. The single, high-energy implant scheme has been compared with a multiple, low-energy implant sequence. For a given level of disorder in the epitaxial layer, the latter yields higher sheet-resistance values though the former offers significant process simplification.

UR - https://www.scopus.com/pages/publications/0037848835

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EP - 3012

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Single-step implant isolation of p⁺-InP with 5-MeV O ions

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