Abstract
Single-step C H4 / H2 -based reactive ion etching (RIE) process, without alternating O2 plasma treatment, has been developed with virtually no polymer buildup on the etched surface. InP ridge waveguides up to 1.9 μm high were etched without any mid- or post-etch O 2 plasma treatment. Smooth and polymer-free sidewalls led to a slight undercut resulting in sidewall slope of ∼85°. Very low waveguide propagation losses (0.28 dB/cm) of "shallow" etched waveguides were obtained. The etched surface has a root-mean-square roughness of 0.66 nm.
Original language | English |
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Pages (from-to) | H281-H284 |
Journal | Journal of the Electrochemical Society |
Volume | 158 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2011 |