Single-step RIE fabrication process of low loss InP waveguide using C H4 / H2 chemistry

M. Lysevych*, H. H. Tan, F. Karouta, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    Single-step C H4 / H2 -based reactive ion etching (RIE) process, without alternating O2 plasma treatment, has been developed with virtually no polymer buildup on the etched surface. InP ridge waveguides up to 1.9 μm high were etched without any mid- or post-etch O 2 plasma treatment. Smooth and polymer-free sidewalls led to a slight undercut resulting in sidewall slope of ∼85°. Very low waveguide propagation losses (0.28 dB/cm) of "shallow" etched waveguides were obtained. The etched surface has a root-mean-square roughness of 0.66 nm.

    Original languageEnglish
    Pages (from-to)H281-H284
    JournalJournal of the Electrochemical Society
    Volume158
    Issue number3
    DOIs
    Publication statusPublished - 2011

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