SiO_x nanowires grown via the active oxidation of silicon

Amorphous, substoichiometric silica nanowires (NWs) can be grown on gold-coated silicon wafers by high-temperature annealing in an inert ambient with a low residual O₂ partial pressure, consistent with conditions required for the active oxidation of the underlying Si substrate. The vapor precursor required for NW growth is volatile SiO obtained directly from the reaction between the substrate and the residual O₂. This review summarizes the important elements of SiO}_x NW growth under active oxidation conditions and includes some examples of more-complex multistructured SiO}_x NW morphologies that utilize the active oxidation process.