Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density

Manjula Siriwardhana, D. Macdonald, F. D. Heinz, F. E. Rougieux

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Citations (Scopus)

    Abstract

    The trapping characteristics of defects related to thermal donors have been studied with transient photoconductance measurements in Cz monocrystalline silicon wafers. The samples were annealed for various lengths of time to create a range of thermal donor concentrations. The de-trapping time constant was measured using photoconductance decay after the illumination is turned off. In order to obtain an estimate of the de-trapping time constants, the measurements were fitted with exponential terms. We find that the de-trapping time constant is inversely related to the concentration of thermal donors, while trapping is not observed in samples without thermal donors.

    Original languageEnglish
    Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages3312-3314
    Number of pages3
    ISBN (Electronic)9781538685297
    DOIs
    Publication statusPublished - 26 Nov 2018
    Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
    Duration: 10 Jun 201815 Jun 2018

    Publication series

    Name2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

    Conference

    Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
    Country/TerritoryUnited States
    CityWaikoloa Village
    Period10/06/1815/06/18

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