Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si

R. G. Elliman; S. M. Hogg; P. Kringhoj

Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si

R. G. Elliman^*, S. M. Hogg, P. Kringhoj

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

Time-resolved reflectivity (TRR) and secondary-ion mass-spectrometry (SIMS) are used to study the solid-phase-epitaxial-crystallization (SPEC) of amorphous Si layers containing a B delta-doped superlattice. The superlattice consists of three narrow B profiles (10 nm FWHM) separated by approximately 170 nm, each with a peak concentration of 1.3×10 ²⁰ B.cm ^-3. The SPEC velocity is shown to increase to a rate approximately three times that of intrinsic Si as the crystalline-amorphous interface passes through each B profile, the velocity enhancement closely following the B distribution. Diffusive broadening of the B profiles is also observed during SPEC. This is used to estimate the diffusivity of B in amorphous Si, which was found to be 2.6±0.5×10 ^-16 cm ²/s at 600 °C.

Original language	English
Title of host publication	Proceedings of the International Conference on Ion Implantation Technology
Pages	1055-1058
Number of pages	4
Publication status	Published - 1999
Event	Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn Duration: 22 Jun 1998 → 26 Jun 1998

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology
Volume	2

Conference

Conference	Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
City	Kyoto, Jpn
Period	22/06/98 → 26/06/98

Cite this

@inproceedings{02596cee5c0743249aca8d08f17a8a67,

title = "Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si",

abstract = "Time-resolved reflectivity (TRR) and secondary-ion mass-spectrometry (SIMS) are used to study the solid-phase-epitaxial-crystallization (SPEC) of amorphous Si layers containing a B delta-doped superlattice. The superlattice consists of three narrow B profiles (10 nm FWHM) separated by approximately 170 nm, each with a peak concentration of 1.3×10 20 B.cm -3. The SPEC velocity is shown to increase to a rate approximately three times that of intrinsic Si as the crystalline-amorphous interface passes through each B profile, the velocity enhancement closely following the B distribution. Diffusive broadening of the B profiles is also observed during SPEC. This is used to estimate the diffusivity of B in amorphous Si, which was found to be 2.6±0.5×10 -16 cm 2/s at 600 °C.",

author = "Elliman, {R. G.} and Hogg, {S. M.} and P. Kringhoj",

year = "1999",

language = "English",

isbn = "078034538X",

series = "Proceedings of the International Conference on Ion Implantation Technology",

pages = "1055--1058",

booktitle = "Proceedings of the International Conference on Ion Implantation Technology",

note = "Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) ; Conference date: 22-06-1998 Through 26-06-1998",

}

Elliman, RG, Hogg, SM & Kringhoj, P 1999, Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si. in Proceedings of the International Conference on Ion Implantation Technology. Proceedings of the International Conference on Ion Implantation Technology, vol. 2, pp. 1055-1058, Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Kyoto, Jpn, 22/06/98.

Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si. / Elliman, R. G.; Hogg, S. M.; Kringhoj, P.
Proceedings of the International Conference on Ion Implantation Technology. 1999. p. 1055-1058 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si

AU - Elliman, R. G.

AU - Hogg, S. M.

AU - Kringhoj, P.

PY - 1999

Y1 - 1999

N2 - Time-resolved reflectivity (TRR) and secondary-ion mass-spectrometry (SIMS) are used to study the solid-phase-epitaxial-crystallization (SPEC) of amorphous Si layers containing a B delta-doped superlattice. The superlattice consists of three narrow B profiles (10 nm FWHM) separated by approximately 170 nm, each with a peak concentration of 1.3×10 20 B.cm -3. The SPEC velocity is shown to increase to a rate approximately three times that of intrinsic Si as the crystalline-amorphous interface passes through each B profile, the velocity enhancement closely following the B distribution. Diffusive broadening of the B profiles is also observed during SPEC. This is used to estimate the diffusivity of B in amorphous Si, which was found to be 2.6±0.5×10 -16 cm 2/s at 600 °C.

AB - Time-resolved reflectivity (TRR) and secondary-ion mass-spectrometry (SIMS) are used to study the solid-phase-epitaxial-crystallization (SPEC) of amorphous Si layers containing a B delta-doped superlattice. The superlattice consists of three narrow B profiles (10 nm FWHM) separated by approximately 170 nm, each with a peak concentration of 1.3×10 20 B.cm -3. The SPEC velocity is shown to increase to a rate approximately three times that of intrinsic Si as the crystalline-amorphous interface passes through each B profile, the velocity enhancement closely following the B distribution. Diffusive broadening of the B profiles is also observed during SPEC. This is used to estimate the diffusivity of B in amorphous Si, which was found to be 2.6±0.5×10 -16 cm 2/s at 600 °C.

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M3 - Conference contribution

AN - SCOPUS:0033348478

SN - 078034538X

SN - 9780780345386

T3 - Proceedings of the International Conference on Ion Implantation Technology

SP - 1055

EP - 1058

BT - Proceedings of the International Conference on Ion Implantation Technology

T2 - Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)

Y2 - 22 June 1998 through 26 June 1998

ER -

Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si

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