Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

P. Kringhøj; R. G. Elliman

doi:10.1103/PhysRevLett.73.858

Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

P. Kringhøj^*, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.

Original language	English
Pages (from-to)	858-861
Number of pages	4
Journal	Physical Review Letters
Volume	73
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.73.858
Publication status	Published - 1994

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10.1103/PhysRevLett.73.858

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abstract = "Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.",

author = "P. Kringh{\o}j and Elliman, {R. G.}",

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AU - Elliman, R. G.

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AB - Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.

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Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

Abstract

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