Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

P. Kringhøj; R. G. Elliman

doi:10.1103/PhysRevLett.73.858

Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

P. Kringhøj^*, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.

Original language	English
Pages (from-to)	858-861
Number of pages	4
Journal	Physical Review Letters
Volume	73
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.73.858
Publication status	Published - 1994

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10.1103/PhysRevLett.73.858

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@article{f815bbc7ed1542b1a048999cf8a88dd4,

title = "Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers",

abstract = "Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.",

author = "P. Kringh{\o}j and Elliman, \{R. G.\}",

year = "1994",

doi = "10.1103/PhysRevLett.73.858",

language = "English",

volume = "73",

pages = "858--861",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "6",

}

TY - JOUR

T1 - Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

AU - Kringhøj, P.

AU - Elliman, R. G.

PY - 1994

Y1 - 1994

N2 - Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.

AB - Solid-phase epitaxial crystallization (SPEC) of Si, Ge, and strain-relaxed Si1-xGex alloys, with x in the range 0.11 to 0.53, is investigated in the temperature range 300 to 650°C. The activation energy for SPEC is shown not to vary monotonically with increasing Ge concentration but to increase above that of Si for Ge concentrations less than x≤0.4. This unexpected behavior is discussed in terms of existing models for SPEC.

UR - https://www.scopus.com/pages/publications/3843147160

U2 - 10.1103/PhysRevLett.73.858

DO - 10.1103/PhysRevLett.73.858

M3 - Article

AN - SCOPUS:3843147160

SN - 0031-9007

VL - 73

SP - 858

EP - 861

JO - Physical Review Letters

JF - Physical Review Letters

IS - 6

ER -

Solid-phase epitaxial crystallization of strain-relaxed Si1-xGex alloy layers

Abstract

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