Solid phase epitaxial growth of amorphized InP

Solid phase epitaxial growth of amorphized InP has been investigated at temperatures of 145-335°C. The epitaxial recrystallization kinetics have been determined for both thermal and ion beam annealing using ion channeling and time-resolved reflectivity measurements and post-anneal, residual disorder has been characterized with transmission electron microscopy. The twin density and size distribution were significantly smaller for ion beam annealed samples, thus clearly demonstrating that ion beam annealing effectively suppresses the onset of highly defective (twinned) regrowth characteristic of thermal annealing. The substantially better crystalline quality of ion beam annealed samples contrasts with observations in GaAs where only a slight difference in post-anneal disorder was apparent for the two annealing regimes.