Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

S. Ruffell; I. V. Mitchell; P. J. Simpson

doi:10.1016/j.nimb.2005.08.079

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

S. Ruffell^*, I. V. Mitchell, P. J. Simpson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm^-2 up to 1e16 cm^-2, the associated a-Si thicknesses from 9.2 nm to 20 nm. Regrowth was driven by rapid thermal annealing for anneal temperatures 425 °C ≤ T_A ≤ 600 °C and for times up to 2500 s. The Si(P) regrowth velocities exceed that of the intrinsic Si SPEG rate by an order of magnitude. Regrowth in the near surface is approximately 1.7 times slower than in the bulk. In Si implanted to high P fluence, Φ ≥ 5e15 cm^-2, regrowth is severely retarded when the recrystallization front intercepts P concentrations in excess of ∼1e21 cm^-3.

Original language	English
Pages (from-to)	591-594
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	242
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.08.079
Publication status	Published - Jan 2006
Externally published	Yes

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Ruffell, S., Mitchell, I. V., & Simpson, P. J. (2006). Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242(1-2), 591-594. https://doi.org/10.1016/j.nimb.2005.08.079

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title = "Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study",

abstract = "Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm-2 up to 1e16 cm-2, the associated a-Si thicknesses from 9.2 nm to 20 nm. Regrowth was driven by rapid thermal annealing for anneal temperatures 425 °C ≤ TA ≤ 600 °C and for times up to 2500 s. The Si(P) regrowth velocities exceed that of the intrinsic Si SPEG rate by an order of magnitude. Regrowth in the near surface is approximately 1.7 times slower than in the bulk. In Si implanted to high P fluence, Φ ≥ 5e15 cm-2, regrowth is severely retarded when the recrystallization front intercepts P concentrations in excess of ∼1e21 cm-3.",

keywords = "Low energy ion implantation, Medium energy ion scattering, Solid phase epitaxial growth",

author = "S. Ruffell and Mitchell, \{I. V.\} and Simpson, \{P. J.\}",

year = "2006",

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doi = "10.1016/j.nimb.2005.08.079",

language = "English",

volume = "242",

pages = "591--594",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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}

Ruffell, S, Mitchell, IV & Simpson, PJ 2006, 'Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 242, no. 1-2, pp. 591-594. https://doi.org/10.1016/j.nimb.2005.08.079

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study. / Ruffell, S.; Mitchell, I. V.; Simpson, P. J.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.2006, p. 591-594.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation

T2 - A medium energy ion scattering study

AU - Ruffell, S.

AU - Mitchell, I. V.

AU - Simpson, P. J.

PY - 2006/1

Y1 - 2006/1

N2 - Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm-2 up to 1e16 cm-2, the associated a-Si thicknesses from 9.2 nm to 20 nm. Regrowth was driven by rapid thermal annealing for anneal temperatures 425 °C ≤ TA ≤ 600 °C and for times up to 2500 s. The Si(P) regrowth velocities exceed that of the intrinsic Si SPEG rate by an order of magnitude. Regrowth in the near surface is approximately 1.7 times slower than in the bulk. In Si implanted to high P fluence, Φ ≥ 5e15 cm-2, regrowth is severely retarded when the recrystallization front intercepts P concentrations in excess of ∼1e21 cm-3.

AB - Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm-2 up to 1e16 cm-2, the associated a-Si thicknesses from 9.2 nm to 20 nm. Regrowth was driven by rapid thermal annealing for anneal temperatures 425 °C ≤ TA ≤ 600 °C and for times up to 2500 s. The Si(P) regrowth velocities exceed that of the intrinsic Si SPEG rate by an order of magnitude. Regrowth in the near surface is approximately 1.7 times slower than in the bulk. In Si implanted to high P fluence, Φ ≥ 5e15 cm-2, regrowth is severely retarded when the recrystallization front intercepts P concentrations in excess of ∼1e21 cm-3.

KW - Low energy ion implantation

KW - Medium energy ion scattering

KW - Solid phase epitaxial growth

UR - https://www.scopus.com/pages/publications/28544434405

U2 - 10.1016/j.nimb.2005.08.079

DO - 10.1016/j.nimb.2005.08.079

M3 - Article

SN - 0168-583X

VL - 242

SP - 591

EP - 594

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

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