Solid-state microwave annealing of ion-implanted 4H-SiC

Siddarth G. Sundaresan; Yong lai Tian; Mark C. Ridgway; Nadeemullah A. Mahadik; Syed B. Qadri; Mulpuri V. Rao

doi:10.1016/j.nimb.2007.04.018

Solid-state microwave annealing of ion-implanted 4H-SiC

Siddarth G. Sundaresan, Yong lai Tian, Mark C. Ridgway, Nadeemullah A. Mahadik, Syed B. Qadri, Mulpuri V. Rao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N₂ ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force microscopy scans. The sheet resistances measured on Al⁺- and P⁺-implanted 4H-SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites.

Original language	English
Pages (from-to)	616-619
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	261
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2007.04.018
Publication status	Published - Aug 2007

Access to Document

10.1016/j.nimb.2007.04.018

Cite this

@article{f4e0fa034d754ff8932b03398c05ec39,

title = "Solid-state microwave annealing of ion-implanted 4H-SiC",

abstract = "Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force microscopy scans. The sheet resistances measured on Al+- and P+-implanted 4H-SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites.",

keywords = "Ion-implantation, Microwave annealing, Sheet resistance, Silicon carbide, Surface roughness",

author = "Sundaresan, {Siddarth G.} and Tian, {Yong lai} and Ridgway, {Mark C.} and Mahadik, {Nadeemullah A.} and Qadri, {Syed B.} and Rao, {Mulpuri V.}",

year = "2007",

month = aug,

doi = "10.1016/j.nimb.2007.04.018",

language = "English",

volume = "261",

pages = "616--619",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Solid-state microwave annealing of ion-implanted 4H-SiC

AU - Sundaresan, Siddarth G.

AU - Tian, Yong lai

AU - Ridgway, Mark C.

AU - Mahadik, Nadeemullah A.

AU - Qadri, Syed B.

AU - Rao, Mulpuri V.

PY - 2007/8

Y1 - 2007/8

N2 - Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force microscopy scans. The sheet resistances measured on Al+- and P+-implanted 4H-SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites.

AB - Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force microscopy scans. The sheet resistances measured on Al+- and P+-implanted 4H-SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites.

KW - Ion-implantation

KW - Microwave annealing

KW - Sheet resistance

KW - Silicon carbide

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=34447279488&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2007.04.018

DO - 10.1016/j.nimb.2007.04.018

M3 - Article

SN - 0168-583X

VL - 261

SP - 616

EP - 619

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Solid-state microwave annealing of ion-implanted 4H-SiC

Abstract

Access to Document

Other files and links

Fingerprint

Cite this