Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

M. K. Linnarsson; M. S. Janson; U. Zimmermann; B. G. Svensson; P. O.Å Persson; L. Hultman; J. Wong-Leung; S. Karlsson; A. Schöner; H. Bleichner; E. Olsson

doi:10.1063/1.1402160

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

M. K. Linnarsson^*, M. S. Janson, U. Zimmermann, B. G. Svensson, P. O.Å Persson, L. Hultman, J. Wong-Leung, S. Karlsson, A. Schöner, H. Bleichner, E. Olsson

^*Corresponding author for this work

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Abstract

Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500°C and 2000°C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of ∼2 × 10²⁰ Al/cm³ (1900°C) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700°C or above when the Al concentration exceeds 2 × 10²⁰ cm^-3. Al-containing precipitates are identified by energy-filtered TEM.

Original language	English
Pages (from-to)	2016-2018
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	13
DOIs	https://doi.org/10.1063/1.1402160
Publication status	Published - 24 Sept 2001

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title = "Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material",

abstract = "Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500°C and 2000°C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of ∼2 × 1020 Al/cm3 (1900°C) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700°C or above when the Al concentration exceeds 2 × 1020 cm-3. Al-containing precipitates are identified by energy-filtered TEM.",

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T1 - Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

AU - Linnarsson, M. K.

AU - Janson, M. S.

AU - Zimmermann, U.

AU - Svensson, B. G.

AU - Persson, P. O.Å

AU - Hultman, L.

AU - Wong-Leung, J.

AU - Karlsson, S.

AU - Schöner, A.

AU - Bleichner, H.

AU - Olsson, E.

PY - 2001/9/24

Y1 - 2001/9/24

N2 - Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500°C and 2000°C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of ∼2 × 1020 Al/cm3 (1900°C) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700°C or above when the Al concentration exceeds 2 × 1020 cm-3. Al-containing precipitates are identified by energy-filtered TEM.

AB - Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500°C and 2000°C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of ∼2 × 1020 Al/cm3 (1900°C) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700°C or above when the Al concentration exceeds 2 × 1020 cm-3. Al-containing precipitates are identified by energy-filtered TEM.

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U2 - 10.1063/1.1402160

DO - 10.1063/1.1402160

M3 - Article

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VL - 79

SP - 2016

EP - 2018

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

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