Solubility limits of dopants in 4H-SiC

M. K. Linnarsson; U. Zimmermann; J. Wong-Leung; A. Schöner; M. S. Janson; C. Jagadish; B. G. Svensson

doi:10.1016/S0169-4332(02)00694-3

Solubility limits of dopants in 4H-SiC

M. K. Linnarsson^*, U. Zimmermann, J. Wong-Leung, A. Schöner, M. S. Janson, C. Jagadish, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass spectrometry has been employed to obtain depth distributions as well as lateral distributions (ion imaging) for boron and aluminium. Transmission electron microscopy has been used to study the crystallinity and determine phase composition. Solubility limits of ∼ 1 × 10 ²⁰ Al/cm ³ (1700 °C) and < 1 × 10 ²⁰ B/cm ³ (1900 °C) have been deduced.

Original language	English
Pages (from-to)	427-432
Number of pages	6
Journal	Applied Surface Science
Volume	203-204
DOIs	https://doi.org/10.1016/S0169-4332(02)00694-3
Publication status	Published - 15 Jan 2003

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title = "Solubility limits of dopants in 4H-SiC",

abstract = " Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass spectrometry has been employed to obtain depth distributions as well as lateral distributions (ion imaging) for boron and aluminium. Transmission electron microscopy has been used to study the crystallinity and determine phase composition. Solubility limits of ∼ 1 × 10 20 Al/cm 3 (1700 °C) and < 1 × 10 20 B/cm 3 (1900 °C) have been deduced.",

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T1 - Solubility limits of dopants in 4H-SiC

AU - Linnarsson, M. K.

AU - Zimmermann, U.

AU - Wong-Leung, J.

AU - Schöner, A.

AU - Janson, M. S.

AU - Jagadish, C.

AU - Svensson, B. G.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass spectrometry has been employed to obtain depth distributions as well as lateral distributions (ion imaging) for boron and aluminium. Transmission electron microscopy has been used to study the crystallinity and determine phase composition. Solubility limits of ∼ 1 × 10 20 Al/cm 3 (1700 °C) and < 1 × 10 20 B/cm 3 (1900 °C) have been deduced.

AB - Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass spectrometry has been employed to obtain depth distributions as well as lateral distributions (ion imaging) for boron and aluminium. Transmission electron microscopy has been used to study the crystallinity and determine phase composition. Solubility limits of ∼ 1 × 10 20 Al/cm 3 (1700 °C) and < 1 × 10 20 B/cm 3 (1900 °C) have been deduced.

KW - Precipitates

KW - SIMS

KW - SiC

KW - Solubility limit

KW - TEM

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DO - 10.1016/S0169-4332(02)00694-3

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SN - 0169-4332

VL - 203-204

SP - 427

EP - 432

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Solubility limits of dopants in 4H-SiC

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