TY - JOUR
T1 - Solution-Based Photo-Patterned Gold Film Formation on Silicon Nitride
AU - Nuwan, Y. M.
AU - Bandara, D. Y.
AU - Karawdeniya, Buddini Iroshika
AU - Whelan, Julie C.
AU - Ginsberg, Lucas D.S.
AU - Dwyer, Jason R.
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/12/28
Y1 - 2016/12/28
N2 - Silicon nitride fabricated by low-pressure chemical vapor deposition (LPCVD) to be silicon-rich (SiNx), is a ubiquitous insulating thin film in the microelectronics industry, and an exceptional structural material for nanofabrication. Free-standing <100 nm thick SiNx membranes are especially compelling, particularly when used to deliver forefront molecular sensing capabilities in nanofluidic devices. We developed an accessible, gentle, and solution-based photodirected surface metallization approach well-suited to forming patterned metal films as integral structural and functional features in thin-membrane-based SiNx devices-for use as electrodes or surface chemical functionalization platforms, for example-augmenting existing device capabilities and properties for a wide range of applications.
AB - Silicon nitride fabricated by low-pressure chemical vapor deposition (LPCVD) to be silicon-rich (SiNx), is a ubiquitous insulating thin film in the microelectronics industry, and an exceptional structural material for nanofabrication. Free-standing <100 nm thick SiNx membranes are especially compelling, particularly when used to deliver forefront molecular sensing capabilities in nanofluidic devices. We developed an accessible, gentle, and solution-based photodirected surface metallization approach well-suited to forming patterned metal films as integral structural and functional features in thin-membrane-based SiNx devices-for use as electrodes or surface chemical functionalization platforms, for example-augmenting existing device capabilities and properties for a wide range of applications.
KW - electroless plating
KW - hydrosilylation
KW - patterned metallization
KW - photocontrolled metallization
KW - silicon nitride covalent photomasking
KW - silicon nitride membrane
KW - silicon nitride surface functionalization
KW - thin gold films
UR - http://www.scopus.com/inward/record.url?scp=85007597178&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b12720
DO - 10.1021/acsami.6b12720
M3 - Article
SN - 1944-8244
VL - 8
SP - 34964
EP - 34969
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 51
ER -