Abstract
Sub-stoichiometric molybdenum oxide (MoO x ) films are commonly deposited on crystalline silicon (c-Si) solar cells by thermal evaporation, a process that requires high vacuum and provides limited control of oxide stoichiometry and in consequence limited control of hole transport properties. Here, we report on a method of forming MoO x films on crystalline silicon wafer surfaces by spin-coating hydrogen molybdenum bronze solutions. It is shown that a ∼2.8 nm thick interfacial SiO x layer forms under the spin-coated MoO x films and that the as-deposited MoO x is amorphous and sub-stoichiometric (x = 2.73), with the concentration of oxygen vacancies in the MoO x being able to be reduced by annealing in air. The as-deposited MoO x films show comparable contact resistivity and passivation quality on c-Si wafers to thermally-evaporated MoO x , demonstrating their potential to be an effective hole-selective contact layer for c-Si solar cells and an alternative for thermally-evaporated films.
Original language | English |
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Pages (from-to) | 139-146 |
Number of pages | 8 |
Journal | Applied Surface Science |
Volume | 423 |
DOIs | |
Publication status | Published - 30 Nov 2017 |