Solution-processed molybdenum oxide for hole-selective contacts on crystalline silicon solar cells

Jingnan Tong*, Yimao Wan, Jie Cui, Sean Lim, Ning Song, Alison Lennon

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    46 Citations (Scopus)

    Abstract

    Sub-stoichiometric molybdenum oxide (MoO x ) films are commonly deposited on crystalline silicon (c-Si) solar cells by thermal evaporation, a process that requires high vacuum and provides limited control of oxide stoichiometry and in consequence limited control of hole transport properties. Here, we report on a method of forming MoO x films on crystalline silicon wafer surfaces by spin-coating hydrogen molybdenum bronze solutions. It is shown that a ∼2.8 nm thick interfacial SiO x layer forms under the spin-coated MoO x films and that the as-deposited MoO x is amorphous and sub-stoichiometric (x = 2.73), with the concentration of oxygen vacancies in the MoO x being able to be reduced by annealing in air. The as-deposited MoO x films show comparable contact resistivity and passivation quality on c-Si wafers to thermally-evaporated MoO x , demonstrating their potential to be an effective hole-selective contact layer for c-Si solar cells and an alternative for thermally-evaporated films.

    Original languageEnglish
    Pages (from-to)139-146
    Number of pages8
    JournalApplied Surface Science
    Volume423
    DOIs
    Publication statusPublished - 30 Nov 2017

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