Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

T. Hakkarainen; O. Douhéret; S. Anand; L. Fu; H. H. Tan; C. Jagadish

doi:10.1063/1.3467138

Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

T. Hakkarainen^*, O. Douhéret, S. Anand, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot (QD) structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the doped structures the QD layers appear more or less uniformly broadened. The origin of the SSRM contrast in the QD layer in the different samples is discussed and correlated with doping schemes.

Original language	English
Article number	041106
Journal	Applied Physics Letters
Volume	97
Issue number	4
DOIs	https://doi.org/10.1063/1.3467138
Publication status	Published - 26 Jul 2010

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abstract = "Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot (QD) structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the doped structures the QD layers appear more or less uniformly broadened. The origin of the SSRM contrast in the QD layer in the different samples is discussed and correlated with doping schemes.",

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AU - Hakkarainen, T.

AU - Douhéret, O.

AU - Anand, S.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2010/7/26

Y1 - 2010/7/26

N2 - Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot (QD) structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the doped structures the QD layers appear more or less uniformly broadened. The origin of the SSRM contrast in the QD layer in the different samples is discussed and correlated with doping schemes.

AB - Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot (QD) structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the doped structures the QD layers appear more or less uniformly broadened. The origin of the SSRM contrast in the QD layer in the different samples is discussed and correlated with doping schemes.

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041106

ER -

Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

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