Abstract
Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 1013 cm-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.
Original language | English |
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Pages (from-to) | 3339-3341 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 21 |
DOIs | |
Publication status | Published - 22 Nov 1999 |