Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing

Xingquan Liu; Wei Lu; Zhi Feng Li; Yi Dong Chen; S. C. Shen; Y. Fu; M. Willander; Hark Hoe Tan; S. Yuan; C. Jagadish; J. Zou; D. J.H. Cockayne

doi:10.1063/1.125344

Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing

Xingquan Liu^*, Wei Lu, Zhi Feng Li, Yi Dong Chen, S. C. Shen, Y. Fu, M. Willander, Hark Hoe Tan, S. Yuan, C. Jagadish, J. Zou, D. J.H. Cockayne

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Single Al_0.5Ga_0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 10¹³ cm^-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.

Original language	English
Pages (from-to)	3339-3341
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	21
DOIs	https://doi.org/10.1063/1.125344
Publication status	Published - 22 Nov 1999

Access to Document

10.1063/1.125344

Cite this

@article{34d9f90aed594f7ea3a7590c5c20e83e,

title = "Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing",

abstract = "Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 1013 cm-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.",

author = "Xingquan Liu and Wei Lu and Li, {Zhi Feng} and Chen, {Yi Dong} and Shen, {S. C.} and Y. Fu and M. Willander and Tan, {Hark Hoe} and S. Yuan and C. Jagadish and J. Zou and Cockayne, {D. J.H.}",

year = "1999",

month = nov,

day = "22",

doi = "10.1063/1.125344",

language = "English",

volume = "75",

pages = "3339--3341",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing

AU - Liu, Xingquan

AU - Lu, Wei

AU - Li, Zhi Feng

AU - Chen, Yi Dong

AU - Shen, S. C.

AU - Fu, Y.

AU - Willander, M.

AU - Tan, Hark Hoe

AU - Yuan, S.

AU - Jagadish, C.

AU - Zou, J.

AU - Cockayne, D. J.H.

PY - 1999/11/22

Y1 - 1999/11/22

N2 - Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 1013 cm-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.

AB - Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 1013 cm-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.

UR - http://www.scopus.com/inward/record.url?scp=0000856355&partnerID=8YFLogxK

U2 - 10.1063/1.125344

DO - 10.1063/1.125344

M3 - Article

SN - 0003-6951

VL - 75

SP - 3339

EP - 3341

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing

Abstract

Access to Document

Other files and links

Fingerprint

Cite this