Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

I. McKerracher; J. Wong-Leung; G. Jolley; L. Fu; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2010.5699773

Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

I. McKerracher^*, J. Wong-Leung, G. Jolley, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO₂ capping layers can enhance these effects through impurityfree vacancy disordering, whereas TiO₂ caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	49-50
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699773
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699773

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McKerracher, I., Wong-Leung, J., Jolley, G., Fu, L., Tan, H. H., & Jagadish, C. (2010). Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 49-50). Article 5699773 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699773

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title = "Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing",

abstract = "Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO2 capping layers can enhance these effects through impurityfree vacancy disordering, whereas TiO2 caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.",

author = "I. McKerracher and J. Wong-Leung and G. Jolley and L. Fu and Tan, {H. H.} and C. Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699773",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "49--50",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

McKerracher, I, Wong-Leung, J, Jolley, G, Fu, L , Tan, HH & Jagadish, C 2010, Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699773, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 49-50, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699773

Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing. / McKerracher, I.; Wong-Leung, J.; Jolley, G. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 49-50 5699773 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

AU - McKerracher, I.

AU - Wong-Leung, J.

AU - Jolley, G.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

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AB - Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO2 capping layers can enhance these effects through impurityfree vacancy disordering, whereas TiO2 caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.

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DO - 10.1109/COMMAD.2010.5699773

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 49

EP - 50

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

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McKerracher I, Wong-Leung J, Jolley G, Fu L , Tan HH , Jagadish C. Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 49-50. 5699773. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699773

Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

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