Spin-dependent quantum and transport lifetimes in a two-dimensional electron or hole gas in the presence of spin-orbit interaction

W. Xu*, P. Vasilopoulos, X. F. Wang

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    A theoretical study is presented for the influence of spin-orbit interaction (SOI) induced by the Rashba effect on quantum and transport lifetimes in a two-dimensional electron or hole gas. We find that for low temperatures, the electronic transport lifetimes due to impurity scattering can differ significantly between different spin branches. In contrast, the quantum lifetimes depend very weakly on the strength of the SOI and are in line with experimental findings. For heavy holes and over a wide range of the SOI strength, the difference between transport/quantum lifetimes in different spin branches is relatively small.

    Original languageEnglish
    Pages (from-to)455-459
    Number of pages5
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume22
    Issue number1-3
    DOIs
    Publication statusPublished - Apr 2004
    Event15th International Conference on ELectronic Propreties - Nara, Japan
    Duration: 14 Jul 200318 Jul 2003

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